WSD100N06GDN56 N-channel 60V 100A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET kakaretso ea sehlahisoa
Motlakase oa WSD100N06GDN56 MOSFET ke 60V, hona joale ke 100A, khanyetso ke 3mΩ, mocha ke N-channel, 'me sephutheloana ke DFN5X6-8.
WINSOK MOSFET libaka tsa kopo
Lisebelisoa tsa matla a bongaka MOSFET, PDs MOSFET, drones MOSFET, lisakerete tsa elektroniki MOSFET, lisebelisoa tse kholo tsa MOSFET, le lisebelisoa tsa motlakase MOSFET.
WINSOK MOSFET e lumellana le linomoro tse ling tsa thepa ea brand
AOS MOSFET AON6264C,AON6264E,AON6266E,AONS6662.STMicroelectronics MOSFET STL13N6F7,STL14N6F7.PANJIT MOSFET PSMQC33N6NS1.POTENS Semiconductor MOSXFET PDC69
MOSFET parameters
| Letšoao | Paramethara | Lintlha | Diyuniti | ||
| VDS | Mokelikeli-Mohloli oa Motlakase | 60 | V | ||
| VGS | Gate-Mohloli Voltage | ±20 | V | ||
| ID1,6 | Khala e Tsoelang Pele ea Hona Joale | TC=25°C | 100 | A | |
| TC=100°C | 65 | ||||
| IDM2 | Pulsed Drain Current | TC=25°C | 240 | A | |
| PD | Phello e Phahameng ea Matla | TC=25°C | 83 | W | |
| TC=100°C | 50 | ||||
| IAS | Avalanche ea Hona joale, Molumo o le mong | 45 | A | ||
| EAS3 | Matla a Avalanche a Pulse e le 'ngoe | 101 | mJ | ||
| TJ | Maximum Junction Temperature | 150 | ℃ | ||
| TSTG | Storage Mocheso Range | - ho tloha ho 55 ho isa ho 150 | ℃ | ||
| RJA1 | Thermal Resistance Junction ho ambient | Boemo bo tsitsitseng | 55 | ℃/W | |
| RθJC1 | Thermal Resistance-Junction to Case | Boemo bo tsitsitseng | 1.5 | ℃/W | |
| Letšoao | Paramethara | Maemo | Min. | Tlanya. | Max. | Yuniti | |
| E tsitsitseng | |||||||
| V(BR)DSS | Mokelikeli oa ho Aroha ha Mohloli oa Mokelikeli | VGS = 0V, ID = 250μA | 60 | V | |||
| IDSS | Sekhahla sa Zero Gate Voltage Hona Joale | VDS = 48 V, VGS = 0V | 1 | µA | |||
| TJ=85°C | 30 | ||||||
| IGSS | Gate Leakage Current | VGS = ± 20V, VDS = 0V | ±100 | nA | |||
| Ka Litšobotsi | |||||||
| VGS(TH) | Motlakase oa Heke oa Threshold | VGS = VDS, IDS = 250µA | 1.2 | 1.8 | 2.5 | V | |
| RDS(e butswe)2 | Drain-Source On-state Resistance | VGS = 10V, ID = 20A | 3.0 | 3.6 | mΩ | ||
| VGS = 4.5V, ID = 15A | 4.4 | 5.4 | mΩ | ||||
| Ho fetoha | |||||||
| Qg | Kakaretso ea Tefiso ea Heke | VDS=30V VGS=10V ID=20A | 58 | nC | |||
| Qgs | Tefiso ea Heke-Bolila | 16 | nC | ||||
| Qgd | Tefiso ea Heke-Drain | 4.0 | nC | ||||
| td (ka) | Bulela Nako ea ho lieha | VGEN=10V VDD=30V ID=20A RG=Ω | 18 | ns | |||
| tr | Bulela Nako ea ho Phahamisa | 8 | ns | ||||
| td(tima) | Nako ea ho lieha ho tima | 50 | ns | ||||
| tf | Nako ea hoetla ea ho tima | 11 | ns | ||||
| Rg | Kganyetso ya gat | VGS=0V, VDS=0V, f=1MHz | 0.7 | Ω | |||
| Matla | |||||||
| Ciss | Ka Bokhoni | VGS=0V VDS=30V f=1MHz | 3458 | pF | |||
| Coss | Out Capacitance | 1522 | pF | ||||
| Crss | Reverse Transfer Capacitance | 22 | pF | ||||
| Litšobotsi tsa Drain-Source Diode le Litekanyetso tse phahameng | |||||||
| IS1,5 | Mohloli o Tsoelang Pele Hona Joale | VG=VD=0V , Matla a Hona Jwale | 55 | A | |||
| ISM | Mohloli oa Pulsed Current3 | 240 | A | ||||
| VSD2 | Diode Forward Voltage | ISD = 1A , VGS=0V | 0.8 | 1.3 | V | ||
| trr | Reverse Recovery Nako | ISD=20A, dlSD/dt=100A/µs | 27 | ns | |||
| Qrr | Reverse Recovery Tefiso | 33 | nC | ||||
