WSD2090DN56 N-channel 20V 80A DFN5*6-8 WINSOK MOSFET

tlhaloso e khuts'oane:

Nomoro ea Mohlala:Setšoantšo sa WSD2090DN56

BVDSS:20V

RDSON:2.8mΩ

ID:80A

Channel:N-chalero

Sephutheloana:DFN5*6-8

Lehlabula la Sehlahisoa:Motlakase oa WSD2090DN56 MOSFET ke 20V, hona joale ke 80A, khanyetso ke 2.8mΩ, mocha ke N-channel, 'me sephutheloana ke DFN5 * 6-8.

Lisebelisoa:Lisakerete tsa elektroniki, li-drones, lisebelisoa tsa motlakase, lithunya tsa fascia, PD, lisebelisoa tse nyane tsa ntlo, jj.

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Lintlha tsa Sehlahisoa

Kopo

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Tlhaloso e Akaretsang

WSD2090DN56 ke setsi se phahameng ka ho fetisisa sa ts'ebetso N-Ch MOSFET e nang le lisele tse phahameng ka ho fetesisa, tse fanang ka RDSON e ntle haholo le tefiso ea heke bakeng sa lits'ebetso tse ngata tsa synchronous buck converter. WSD2090DN56 e kopana le tlhokahalo ea RoHS le Green Product 100% EAS e netefalitsoeng ka ts'epo e felletseng e lumelletsoeng.

Likaroloana

Theknoloji e tsoetseng pele ea high cell density Trench, Super Low Gate Charge, Excellent CdV / dt effect e fokotseha, 100% EAS Guaranteed, Green Device E fumaneha

Lisebelisoa

Switch, Power System, Load switch, lisakerete tsa elektroniki, li-drones, lisebelisoa tsa motlakase, lithunya tsa fascia, PD, lisebelisoa tse nyane tsa ntlo, jj.

nomoro ea thepa e tsamaellanang

AOS AON6572

Mekhahlelo ea bohlokoa

Litefiso tse Phahameng ka ho Fetisisa (TC=25℃ ntle le ha ho boletsoe ka tsela e 'ngoe)

Letšoao	Paramethara	Max.	Diyuniti
VDSS	Mokelikeli-Mohloli oa Motlakase	20	V
VGSS	Gate-Mohloli Voltage	±12	V
ID@TC=25℃	Khala e Tsoelang Pele ea Hona Joale, VGS @ 10V1	80	A
ID@TC=100℃	Khala e Tsoelang Pele ea Hona Joale, VGS @ 10V1	59	A
IDM	Pulsed Drain Current note1	360	A
EAS	Note e le 'ngoe ea Pulsed Avalanche Energy note2	110	mJ
PD	Ho felloa ke Matla	81	W
RθJA	Thermal Resistance, Junction to Case	65	℃/W
RθJC	Thermal Resistance Junction-Case 1	4	℃/W
TJ, TSTG	Mokhoa oa ho sebetsa le oa ho boloka mocheso oa mocheso	-55 ho ea ho +175	℃

Litšobotsi tsa Motlakase (TJ=25 ℃, ntle le haeba ho boletsoe ka tsela e 'ngoe)

Letšoao	Paramethara	Maemo	Min	Tlanya	Max	Diyuniti
BVDSS	Mokelikeli oa ho Aroha ha Mohloli oa Mokelikeli	VGS=0V, ID=250μA	20	24	---	V
△BVDSS/△TJ	BVDSS Temperature Coefficient	Ho buuoa ka 25℃ , ID=1mA	---	0.018	---	V/℃
VGS(th)	Motlakase oa Heke oa Threshold	VDS= VGS, ID=250μA	0.50	0.65	1.0	V
RDS(ON)	Static Drain-Source On-Resistance	VGS=4.5V, ID=30A	---	2.8	4.0	mΩ
RDS(ON)	Static Drain-Source On-Resistance	VGS=2.5V, ID=20A	---	4.0	6.0	mΩ
IDSS	Sekhahla sa Zero Gate Voltage Hona Joale	VDS=20V,VGS=0V	---	---	1	μA
IGSS	Gate-Body Leakage Current	VGS=±10V, VDS=0V	---	---	±100	nA
Ciss	Matla a ho Kena	VDS=10V,VGS=0V,f=1MHZ	---	3200	---	pF
Coss	Bokhoni ba tlhahiso		---	460	---
Crss	Reverse Transfer Capacitance		---	446	---
Qg	Kakaretso ea Tefiso ea Heke	VGS=4.5V,VDS=10V,ID=30A	---	11.05	---	nC
Qgs	Tefiso ea Heke-Mohloli		---	1.73	---
Qgd	Tefiso ea Heke-Drain		---	3.1	---
tD(buella)	Bulela Nako ea ho lieha	VGS=4.5V, VDS=10V, ID=30ARGEN=1.8Ω	---	9.7	---	ns
tr	Bulela Nako ea ho Phahamisa		---	37	---
tD(e tima)	Nako ea ho lieha ho tima		---	63	---
tf	Nako ea hoetla ea ho tima		---	52	---
VSD	Diode Forward Voltage	KE=7.6A,VGS=0V	---	---	1.2	V