WSD25280DN56G N-channel 25V 280A DFN5X6-8 WINSOK MOSFET

lihlahisoa

WSD25280DN56G N-channel 25V 280A DFN5X6-8 WINSOK MOSFET

tlhaloso e khuts'oane:

Nomoro ea Karolo:Setšoantšo sa WSD25280DN56G

BVDSS:25V

ID:280A

RDSON:0.7mΩ 

Channel:N-lekanale

Sephutheloana:DFN5X6-8


Lintlha tsa Sehlahisoa

Kopo

Li-tag tsa Sehlahisoa

WINSOK MOSFET kakaretso ea sehlahisoa

Motlakase oa WSD25280DN56G MOSFET ke 25V, hona joale ke 280A, khanyetso ke 0.7mΩ, mocha ke N-channel, 'me sephutheloana ke DFN5X6-8.

WINSOK MOSFET libaka tsa kopo

High Frequency Point-of-Load Synchronous,Buck Converter,Networking DC-DC Power System,Sesebelisoa sa Sesebelisoa sa Matla,E-cigarettes MOSFET, wireless charger MOSFET, drones MOSFET, medical care MOSFET, car charger MOSFET, controller MOSFET, dijithale dihlahiswa MOSFET, lisebelisoa tse nyenyane tsa ka tlung MOSFET, moreki electronics MOSFET.

WINSOK MOSFET e lumellana le linomoro tse ling tsa thepa ea brand

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MOSFET parameters

Letšoao

Paramethara

Lintlha

Diyuniti

VDS

Mokelikeli-Mohloli oa Motlakase

25

V

VGS

Gate-Sourka Voltage

±20

V

ID@TC=25

Khala e Tsoelang Pele ea Hona Joalesilicon Limited1,7

280

A

ID@TC=70

Khala e Tsoelang Pele ea Hona Joale(Silicon Limited1,7

190

A

IDM

Pulsed Drain Current2

600

A

EAS

Matla a Avalanche a Pulse e le 'ngoe3

1200

mJ

IAS

Avalanche Current

100

A

PD@TC=25

Kakaretso ea Phallo ea Matla4

83

W

TSTG

Storage Mocheso Range

- ho tloha ho 55 ho isa ho 150

TJ

Operating Junction Temperature Range

- ho tloha ho 55 ho isa ho 150

 

Letšoao

Paramethara

Maemo

Min.

Tlanya.

Max.

Yuniti

BVDSS

Mokelikeli oa ho Aroha ha Mohloli oa Mokelikeli VGS=0V, keD=250uA

25

---

---

V

BVDSS/△TJ

BVDSSMocheso Coefficient Sheba ho 25, keD=1mA

---

0.022

---

V/

RDS(ON)

Static Drain-Source On-Resistance2 VGS=10V, keD=20A

---

0.7

0.9 mΩ
VGS=4.5V , keD=20A

---

1.4

1.9

VGS(th)

Motlakase oa Heke oa Threshold VGS=VDS, keD=250uA

1.0

---

2.5

V

VGS(th)

VGS(th)Mocheso Coefficient

---

-6.1

---

mV/

IDSS

Khale-Mohloli Leakage Current VDS=20V , VGS=0V , TJ=25

---

---

1

uA

VDS=20V , VGS=0V , TJ=55

---

---

5

IGSS

Heke-Mohloli Leakage Current VGS=±20V, VDS=0V

---

---

±100

nA

gfs

Fetela Transconductance VDS=5V, keD=10A

---

40

---

S

Rg

Khanyetso ea Heke VDS=0V , VGS=0V , f=1MHz

---

3.8

1.5

Ω

Qg

Kakaretso ea Tefiso ea Keiti (4.5V) VDS=15V , VGS=4.5V , keD=20A

---

72

---

nC

Qgs

Tefiso ea Heke-Mohloli

---

18

---

Qgd

Tefiso ea Heke-Drain

---

24

---

Td(ho)

Bulela Nako ea ho lieha VDD=15V , VGEN=10V ,RG=1Ω, keD=10A

---

33

---

ns

Tr

Nako ea Tsoha

---

55

---

Td(e tima)

Nako ea ho lieha ho tima

---

62

---

Tf

Nako ea hoetla

---

22

---

Ciss

Matla a ho Kena VDS=15V , VGS=0V , f=1MHz

---

7752

---

pF

Coss

Bokhoni ba tlhahiso

---

1120

---

Crss

Reverse Transfer Capacitance

---

650

---

 

 


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