WSD30150ADN56 N-channel 30V 145A DFN5X6-8 WINSOK MOSFET

lihlahisoa

WSD30150ADN56 N-channel 30V 145A DFN5X6-8 WINSOK MOSFET

tlhaloso e khuts'oane:

Nomoro ea Karolo:Setšoantšo sa WSD30150ADN56

BVDSS:30V

ID:145A

RDSON:2.2mΩ 

Channel:N-chalero

Sephutheloana:DFN5X6-8


Lintlha tsa Sehlahisoa

Kopo

Li-tag tsa Sehlahisoa

WINSOK MOSFET kakaretso ea sehlahisoa

Motlakase oa WSD30150DN56 MOSFET ke 30V, hona joale ke 150A, khanyetso ke 1.8mΩ, mocha ke N-channel, 'me sephutheloana ke DFN5X6-8.

WINSOK MOSFET libaka tsa kopo

E-lisakerete MOSFET, wireless charger MOSFET, drones MOSFET, tlhokomelo ea bongaka MOSFET, likoloi charger MOSFET, controller MOSFET, dijithale dihlahiswa MOSFET, lisebelisoa tse nyenyane tsa ka tlung MOSFET, moreki electronics MOSFET.

WINSOK MOSFET e lumellana le linomoro tse ling tsa thepa ea brand

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TOSHIBA MOSFET TPH1R43NL.

PANJIT MOSFET PJQ5428.

NIKO-SEM MOSFET PKC26BB,PKE24BB.

POTENS Semiconductor MOSFET PDC392X.

MOSFET parameters

Letšoao

Paramethara

Lintlha

Diyuniti

VDS

Mokelikeli-Mohloli oa Motlakase

30

V

VGS

Gate-Sourka Voltage

±20

V

ID@TC=25

Mokelikeli o Tsoelang Pele, VGS@10V1,7

150

A

ID@TC=100

Mokelikeli o Tsoelang Pele, VGS@10V1,7

83

A

IDM

Pulsed Drain Current2

200

A

EAS

Matla a Avalanche a Pulse e le 'ngoe3

125

mJ

IAS

Avalanche Current

50

A

PD@TC=25

Kakaretso ea Phallo ea Matla4

62.5

W

TSTG

Storage Mocheso Range

- ho tloha ho 55 ho isa ho 150

TJ

Operating Junction Temperature Range

- ho tloha ho 55 ho isa ho 150

 

Letšoao

Paramethara

Maemo

Min.

Tlanya.

Max.

Yuniti

BVDSS

Mokelikeli oa ho Aroha ha Mohloli oa Mokelikeli VGS=0V, keD=250uA

30

---

---

V

BVDSS/△TJ

BVDSSMocheso Coefficient Sheba ho 25, keD=1mA

---

0.02

---

V/

RDS(ON)

Static Drain-Source On-Resistance2 VGS=10V, keD=20A

---

1.8

2.4 mΩ
VGS=4.5V , keD=15A  

2.4

3.2

VGS(th)

Motlakase oa Heke oa Threshold VGS=VDS, keD=250uA

1.4

1.7

2.5

V

VGS(th)

VGS(th)Mocheso Coefficient

---

-6.1

---

mV/

IDSS

Khale-Mohloli Leakage Current VDS=24V , VGS=0V , TJ=25

---

---

1

uA

VDS=24V , VGS=0V , TJ=55

---

---

5

IGSS

Heke-Mohloli Leakage Current VGS=±20V, VDS=0V

---

---

±100

nA

gfs

Fetela Transconductance VDS=5V, keD=10A

---

27

---

S

Rg

Khanyetso ea Heke VDS=0V , VGS=0V , f=1MHz

---

0.8

1.5

Ω

Qg

Kakaretso ea Tefiso ea Keiti (4.5V) VDS=15V , VGS=4.5V , keD=30A

---

26

---

nC

Qgs

Tefiso ea Heke-Mohloli

---

9.5

---

Qgd

Tefiso ea Heke-Drain

---

11.4

---

Td(ho)

Bulela Nako ea ho lieha VDD=15V , VGEN=10V , RG=6Ω, keD=1A, RL=15Ω.

---

20

---

ns

Tr

Nako ea Tsoha

---

12

---

Td(e tima)

Nako ea ho lieha ho tima

---

69

---

Tf

Nako ea hoetla

---

29

---

Ciss

Matla a ho Kena VDS=15V , VGS=0V , f=1MHz 2560 3200

3850

pF

Coss

Bokhoni ba tlhahiso

560

680

800

Crss

Reverse Transfer Capacitance

260

320

420


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