WSD3023DN56 N-Ch le P-Channel 30V/-30V 14A/-12A DFN5*6-8 WINSOK MOSFET

tlhaloso e khuts'oane:

Nomoro ea Mohlala:WSD3023DN56

BVDSS:30V/-30V

RDSON:14mΩ/23mΩ

ID:14A/-12A

Channel:N-Ch le P-Channel

Sephutheloana:DFN5*6-8

Lehlabula la Sehlahisoa:Motlakase oa WSD3023DN56 MOSFET ke 30V / -30V, hona joale ke14A / -12A, khanyetso ke 14mΩ / 23mΩ, mocha ke N-Ch le P-Channel, 'me sephutheloana ke DFN5 * 6-8.

Lisebelisoa:Drones, motors, likoloi tsa elektroniki, lisebelisoa tse kholo.

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Tlhaloso e Akaretsang

WSD3023DN56 ke setsi se phahameng ka ho fetisisa sa ts'ebetso ea N-ch le P-ch MOSFET e nang le lisele tse phahameng ka ho fetesisa, tse fanang ka RDSON e ntle haholo le tefiso ea heke bakeng sa lits'ebetso tse ngata tsa synchronous buck converter. WSD3023DN56 e kopana le tlhoko ea RoHS le Green Product 100% EAS e netefalitsoeng ka ts'epo e felletseng e lumelletsoeng.

Likaroloana

Theknoloji e tsoetseng pele ea high cell density Trench, Super Low Gate Charge, Excellent CdV/dt effect e fokotseha, 100% EAS Guaranteed, Green Device Available.

Lisebelisoa

High Frequency Point-of-Load Synchronous Buck Converter bakeng sa MB/NB/UMPC/VGA,Networking DC-DC Power System ,CCFL Back-light Inverter,Drones, motors, likoloi tsa elektroniki, lisebelisoa tse kholo.

nomoro ea thepa e tsamaellanang

PANJIT PJQ5606

Mekhahlelo ea bohlokoa

Letšoao	Paramethara	Lintlha		Diyuniti
Letšoao	Paramethara	N-Ch	P-Ch	Diyuniti
VDS	Mokelikeli-Mohloli oa Motlakase	30	-30	V
VGS	Gate-Mohloli Voltage	±20	±20	V
ID	Mokelikeli o Tsoelang Pele oa Hona Joale, VGS(NP)=10V,Ta=25℃	14*	-12	A
ID	Mokelikeli o Tsoelang Pele oa Hona Joale, VGS(NP)=10V,Ta=70℃	7.6	-9.7	A
IDP a	Pulse Drain Hajoale e Lekoa, VGS(NP)=10V	48	-48	A
EAS c	Matla a Avalanche, Puse e le 'ngoe, L=0.5mH	20	20	mJ
IAS c	Avalanche ea Hona joale, Mothapo o le mong, L=0.5mH	9	-9	A
PD	Kakaretso ea Phallo ea Matla, Ta=25℃	5.25	5.25	W
TSTG	Storage Mocheso Range	-55 ho isa ho 175	-55 ho isa ho 175	℃
TJ	Operating Junction Temperature Range	175	175	℃
RqJA b	Thermal Resistance-Junction to Ambient,Stay State	60	60	℃/W
RqJC	Thermal Resistance-Junction to Case,Stay State	6.25	6.25	℃/W

Letšoao	Paramethara	Maemo	Min.	Tlanya.	Max.	Yuniti
BVDSS	Mokelikeli oa ho Aroha ha Mohloli oa Mokelikeli	VGS=0V , ID=250uA	30	---	---	V
RDS(ON)d	Static Drain-Source On-Resistance	VGS=10V , ID=8A	---	14	18.5	mΩ
RDS(ON)d	Static Drain-Source On-Resistance	VGS=4.5V , ID=5A	---	17	25	mΩ
VGS(th)	Motlakase oa Heke oa Threshold	VGS=VDS , ID =250uA	1.3	1.8	2.3	V
IDSS	Khale-Mohloli Leakage Current	VDS=20V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Khale-Mohloli Leakage Current	VDS=20V , VGS=0V , TJ=85℃	---	---	30	uA
IGSS	Heke-Mohloli Leakage Current	VGS=±20V , VDS=0V	---	---	±100	nA
Rg	Khanyetso ea Heke	VDS=0V , VGS=0V , f=1MHz	---	1.7	3.4	Ω
Qge	Kakaretso ea Tefiso ea Heke	VDS=15V, VGS=4.5V, IDS=8A	---	5.2	---	nC
Qgse	Tefiso ea Heke-Mohloli		---	1.0	---
Qgde	Tefiso ea Heke-Drain		---	2.8	---
Td(ho)e	Bulela Nako ea ho lieha	VDD=15V,RL=15R, IDS=1A,VGEN=10V, RG=6R.	---	6	---	ns
Sefate	Nako ea Tsoha		---	8.6	---
Td(tima)e	Nako ea ho lieha ho tima		---	16	---
Tfe	Nako ea hoetla		---	3.6	---
Cisse	Matla a ho Kena	VDS=15V , VGS=0V , f=1MHz	---	545	---	pF
Cosse	Bokhoni ba Tlhahiso		---	95	---
Crsse	Reverse Transfer Capacitance		---	55	---