WSD30300DN56G N-channel 30V 300A DFN5X6-8 WINSOK MOSFET

lihlahisoa

WSD30300DN56G N-channel 30V 300A DFN5X6-8 WINSOK MOSFET

tlhaloso e khuts'oane:

Nomoro ea Karolo:WSD30300DN56G

BVDSS:30V

ID:300A

RDSON:0.7mΩ 

Channel:N-lekanale

Sephutheloana:DFN5X6-8


Lintlha tsa Sehlahisoa

Kopo

Li-tag tsa Sehlahisoa

WINSOK MOSFET kakaretso ea sehlahisoa

Motlakase oa WSD20100DN56 MOSFET ke 20V, hona joale ke 90A, khanyetso ke 1.6mΩ, mocha ke N-channel, 'me sephutheloana ke DFN5X6-8.

WINSOK MOSFET libaka tsa kopo

Lisakarete tsa elektronike MOSFET, li-drones MOSFET, lisebelisoa tsa motlakase MOSFET, lithunya tsa fascia MOSFET, PD MOSFET, lisebelisoa tse nyenyane tsa ka tlung MOSFET.

WINSOK MOSFET e lumellana le linomoro tse ling tsa thepa ea brand

AOS MOSFET AON6572.

POTENS Semiconductor MOSFET PDC394X.

MOSFET parameters

Letšoao

Paramethara

Lintlha

Diyuniti

VDS

Mokelikeli-Mohloli oa Motlakase

20

V

VGS

Gate-Mohloli Voltage

±12

V

ID@TC=25℃

Khala e Tsoelang Pele ea Hona Joale1

90

A

ID@TC=100℃

Khala e Tsoelang Pele ea Hona Joale1

48

A

IDM

Pulsed Drain Current2

270

A

EAS

Matla a Avalanche a Pulse e le 'ngoe3

80

mJ

IAS

Avalanche Current

40

A

PD@TC=25℃

Kakaretso ea Phallo ea Matla4

83

W

TSTG

Storage Mocheso Range

- ho tloha ho 55 ho isa ho 150

TJ

Operating Junction Temperature Range

- ho tloha ho 55 ho isa ho 150

RJA

Thermal Resistance Junction-ambient1(t10S)

20

/W

RJA

Thermal Resistance Junction-ambient1(Boemo bo tsitsitseng)

55

/W

RθJC

Thermal Resistance Junction-kee1

1.5

/W

 

Letšoao

Paramethara

Maemo

Min

Tlanya

Max

Yuniti

BVDSS

Mokelikeli oa ho Aroha ha Mohloli oa Mokelikeli VGS=0V , ID=250uA

20

23

---

V

VGS(th)

Motlakase oa Heke oa Threshold VGS=VDS , ID =250uA

0.5

0.68

1.0

V

RDS(ON)

Static Drain-Source On-Resistance2 VGS=10V , ID=20A

---

1.6

2.0

RDS(ON)

Static Drain-Source On-Resistance2 VGS=4.5V , ID=20A  

1.9

2.5

RDS(ON)

Static Drain-Source On-Resistance2 VGS=2.5V , ID=20A

---

2.8

3.8

IDSS

Khale-Mohloli Leakage Current VDS=16V , VGS=0V , TJ=25

---

---

1

uA

VDS=16V , VGS=0V , TJ=125

---

---

5

IGSS

Heke-Mohloli Leakage Current VGS=±10V , VDS=0V

---

---

±10

uA

Rg

Khanyetso ea Heke VDS=0V , VGS=0V , f=1MHz

---

1.2

---

Ω

Qg

Kakaretso ea Tefiso ea Heke (10V) VDS=15V , VGS=10V , ID=20A

---

77

---

nC

Qgs

Tefiso ea Heke-Mohloli

---

8.7

---

Qgd

Tefiso ea Heke-Drain

---

14

---

Td(ho)

Bulela Nako ea ho lieha VDD=15V , VGS=10V , RG=3 ,

ID=20A

---

10.2

---

ns

Tr

Nako ea Tsoha

---

11.7

---

Td(e tima)

Nako ea ho lieha ho tima

---

56.4

---

Tf

Nako ea hoetla

---

16.2

---

Ciss

Matla a ho Kena VDS=10V , VGS=0V , f=1MHz

---

4307

---

pF

Coss

Bokhoni ba tlhahiso

---

501

---

Crss

Reverse Transfer Capacitance

---

321

---

IS

Mohloli o Tsoelang Pele Hona Joale1,5 VG=VD=0V , Matla a Hona Joale

---

---

50

A

VSD

Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25

---

---

1.2

V

trr

Reverse Recovery Nako IF=20A , di/dt=100A/µs ,

TJ=25

---

22

---

nS

Qrr

Reverse Recovery Tefiso

---

72

---

nC


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