WSD30350DN56G N-channel 30V 350A DFN5X6-8 WINSOK MOSFET

lihlahisoa

WSD30350DN56G N-channel 30V 350A DFN5X6-8 WINSOK MOSFET

tlhaloso e khuts'oane:

Nomoro ea Karolo:Setšoantšo sa WSD30350DN56G

BVDSS:30V

ID:350A

RDSON:0.48mΩ 

Channel:N-chalero

Sephutheloana:DFN5X6-8


Lintlha tsa Sehlahisoa

Kopo

Li-tag tsa Sehlahisoa

WINSOK MOSFET kakaretso ea sehlahisoa

Motlakase oa WSD30350DN56G MOSFET ke 30V, hona joale ke 350A, khanyetso ke 1.8mΩ, mocha ke N-channel, 'me sephutheloana ke DFN5X6-8.

WINSOK MOSFET libaka tsa kopo

E-cigarette MOSFET, wireless charger MOSFET, drones MOSFET, medical care MOSFET, car charger MOSFET, controller MOSFET, dijithale dihlahiswa MOSFET, lisebelisoa tse nyenyane tsa ka tlung MOSFET, moreki electronics MOSFET.

MOSFET parameters

Letšoao

Paramethara

Lintlha

Diyuniti

VDS

Mokelikeli-Mohloli oa Motlakase

30

V

VGS

Gate-Sourka Voltage

±20

V

ID@TC=25

Khala e Tsoelang Pele ea Hona Joalesilicon Limited1,7

350

A

ID@TC=70

Khala e Tsoelang Pele ea Hona Joale(Silicon Limited1,7

247

A

IDM

Pulsed Drain Current2

600

A

EAS

Matla a Avalanche a Pulse e le 'ngoe3

1800

mJ

IAS

Avalanche Current

100

A

PD@TC=25

Kakaretso ea Phallo ea Matla4

104

W

TSTG

Storage Mocheso Range

- ho tloha ho 55 ho isa ho 150

TJ

Operating Junction Temperature Range

- ho tloha ho 55 ho isa ho 150

 

Letšoao

Paramethara

Maemo

Min.

Tlanya.

Max.

Yuniti

BVDSS

Mokelikeli oa ho Aroha ha Mohloli oa Mokelikeli VGS=0V, keD=250uA

30

---

---

V

BVDSS/△TJ

BVDSSMocheso Coefficient Sheba ho 25, keD=1mA

---

0.022

---

V/

RDS(ON)

Static Drain-Source On-Resistance2 VGS=10V, keD=20A

---

0.48

0.62

mΩ
VGS=4.5V , keD=20A

---

0.72

0.95

VGS(th)

Motlakase oa Heke oa Threshold VGS=VDS, keD=250uA

1.2

1.5

2.5

V

VGS(th)

VGS(th)Mocheso Coefficient

---

-6.1

---

mV/

IDSS

Khale-Mohloli Leakage Current VDS=24V , VGS=0V , TJ=25

---

---

1

uA

VDS=24V , VGS=0V , TJ=55

---

---

5

IGSS

Heke-Mohloli Leakage Current VGS=±20V, VDS=0V

---

---

±100

nA

gfs

Fetela Transconductance VDS=5V, keD=10A

---

40

---

S

Rg

Khanyetso ea Heke VDS=0V , VGS=0V , f=1MHz

---

3.8

1.5

Ω

Qg

Kakaretso ea Tefiso ea Keiti (4.5V) VDS=15V , VGS=4.5V , keD=20A

---

89

---

nC

Qgs

Tefiso ea Heke-Mohloli

---

37

---

Qgd

Tefiso ea Heke-Drain

---

20

---

Td(ho)

Bulela Nako ea ho lieha VDD=15V , VGEN=10V ,

RG=1Ω, keD=10A

---

25

---

ns

Tr

Nako ea Tsoha

---

34

---

Td(e tima)

Nako ea ho lieha ho tima

---

61

---

Tf

Nako ea hoetla

---

18

---

Ciss

Matla a ho Kena VDS=15V , VGS=0V , f=1MHz

---

7845

---

pF

Coss

Bokhoni ba tlhahiso

---

4525

---

Crss

Reverse Transfer Capacitance

---

139

---


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