WSD40120DN56 N-channel 40V 120A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET kakaretso ea sehlahisoa
Motlakase oa WSD40120DN56 MOSFET ke 40V, hona joale ke 120A, khanyetso ke 1.85mΩ, mocha ke N-channel, 'me sephutheloana ke DFN5X6-8.
WINSOK MOSFET libaka tsa kopo
E-cigarette MOSFET, wireless charger MOSFET, drones MOSFET, medical care MOSFET, car charger MOSFET, controller MOSFET, dijithale dihlahiswa MOSFET, lisebelisoa tse nyenyane tsa ka tlung MOSFET, moreki electronics MOSFET.
WINSOK MOSFET e lumellana le linomoro tse ling tsa thepa ea brand
AOS MOSFET AON6234,AON6232,AON623.Onsemi,FAIRCHILD MOSFET NVMFS5C442NL.VISHAY MOSFET SiRA52ADP,SiJA52ADP.STMicroelectronics MOSFET STL12N4LF6AG.NXP MOSFET TPHTOPH48ADP Q544.NIKO-SEM MOSFET PKCSBB.POTENS Semiconductor MOSFET PDC496X.
MOSFET parameters
| Letšoao | Paramethara | Lintlha | Diyuniti |
| VDS | Mokelikeli-Mohloli oa Motlakase | 40 | V |
| VGS | Gate-Sourka Voltage | ±20 | V |
| ID@TC=25℃ | Mokelikeli o Tsoelang Pele, VGS@10V1,7 | 120 | A |
| ID@TC=100℃ | Mokelikeli o Tsoelang Pele, VGS@10V1,7 | 100 | A |
| IDM | Pulsed Drain Current2 | 400 | A |
| EAS | Matla a Avalanche a Pulse e le 'ngoe3 | 240 | mJ |
| IAS | Avalanche Current | 31 | A |
| PD@TC=25℃ | Kakaretso ea Phallo ea Matla4 | 104 | W |
| TSTG | Storage Mocheso Range | - ho tloha ho 55 ho isa ho 150 | ℃ |
| TJ | Operating Junction Temperature Range | - ho tloha ho 55 ho isa ho 150 | ℃ |
| Letšoao | Paramethara | Maemo | Min. | Tlanya. | Max. | Yuniti |
| BVDSS | Mokelikeli oa ho Aroha ha Mohloli oa Mokelikeli | VGS=0V, keD=250uA | 40 | --- | --- | V |
| △BVDSS/△TJ | BVDSSMocheso Coefficient | Sheba ho 25℃, keD=1mA | --- | 0.043 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , keD=30A | --- | 1.85 | 2.4 | mΩ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=4.5V , keD=20A | --- | 2.5 | 3.3 | mΩ |
| VGS(th) | Motlakase oa Heke oa Threshold | VGS=VDS, keD=250uA | 1.5 | 1.8 | 2.5 | V |
| △VGS(th) | VGS(th)Mocheso Coefficient | --- | -6,94 | --- | mV/℃ | |
| IDSS | Khale-Mohloli Leakage Current | VDS=32V , VGS=0V , TJ=25℃ | --- | --- | 2 | uA |
| VDS=32V , VGS=0V , TJ=55℃ | --- | --- | 10 | |||
| IGSS | Heke-Mohloli Leakage Current | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
| gfs | Fetela Transconductance | VDS=5V, keD=20A | --- | 55 | --- | S |
| Rg | Khanyetso ea Heke | VDS=0V , VGS=0V , f=1MHz | --- | 1.1 | 2 | Ω |
| Qg | Kakaretso ea Tefiso ea Heke (10V) | VDS=20V , VGS=10V, keD=10A | --- | 76 | 91 | nC |
| Qgs | Tefiso ea Heke-Mohloli | --- | 12 | 14.4 | ||
| Qgd | Tefiso ea Heke-Drain | --- | 15.5 | 18.6 | ||
| Td(ho) | Bulela Nako ea ho lieha | VDD=30V , VGEN=10V , RG=1Ω, keD=1A ,RL=15Ω. | --- | 20 | 24 | ns |
| Tr | Nako ea Tsoha | --- | 10 | 12 | ||
| Td(e tima) | Nako ea ho lieha ho tima | --- | 58 | 69 | ||
| Tf | Nako ea hoetla | --- | 34 | 40 | ||
| Ciss | Matla a ho Kena | VDS=20V , VGS=0V , f=1MHz | --- | 4350 | --- | pF |
| Coss | Bokhoni ba tlhahiso | --- | 690 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 370 | --- |
