WSD4080DN56 N-channel 40V 85A DFN5X6-8 WINSOK MOSFET

lihlahisoa

WSD4080DN56 N-channel 40V 85A DFN5X6-8 WINSOK MOSFET

tlhaloso e khuts'oane:

Nomoro ea Karolo:Setšoantšo sa WSD4080DN56

BVDSS:40V

ID:85A

RDSON:4.5mΩ 

Channel:N-chalero

Sephutheloana:DFN5X6-8


Lintlha tsa Sehlahisoa

Kopo

Li-tag tsa Sehlahisoa

WINSOK MOSFET kakaretso ea sehlahisoa

Motlakase oa WSD4080DN56 MOSFET ke 40V, hona joale ke 85A, khanyetso ke 4.5mΩ, mocha ke N-channel, 'me sephutheloana ke DFN5X6-8.

WINSOK MOSFET libaka tsa kopo

Lisebelisoa tse nyane tsa MOSFET, lisebelisoa tsa letsoho tsa MOSFET, li-motor MOSFET.

WINSOK MOSFET e lumellana le linomoro tse ling tsa thepa ea brand

AOS MOSFET AON623.STMicroelectronics MOSFET STL52DN4LF7AG,STL64DN4F7AG,STL64N4F7AG.PANJIT MOSFET PJQ5442.POTENS Semiconductor MOSFET PDC496X.

MOSFET parameters

Letšoao

Paramethara

Lintlha

Diyuniti

VDS

Mokelikeli-Mohloli oa Motlakase

40

V

VGS

Gate-Mohloli Voltage

±20

V

ID@TC=25℃

Mokelikeli o Tsoelang Pele, VGS @10V1

85

A

ID@TC=100℃

Mokelikeli o Tsoelang Pele, VGS @10V1

58

A

IDM

Pulsed Drain Current2

100

A

EAS

Matla a Avalanche a Pulse e le 'ngoe3

110.5

mJ

IAS

Avalanche Current

47

A

PDTC=25℃

Kakaretso ea Phallo ea Matla4

52.1

W

TSTG

Storage Mocheso Range

- ho tloha ho 55 ho isa ho 150

TJ

Operating Junction Temperature Range

- ho tloha ho 55 ho isa ho 150

RθJA

Thermal Resistance Junction-Ambient1

62

℃/W

RθJC

Thermal Resistance Junction-Case1

2.4

℃/W

 

Letšoao

Paramethara

Maemo

Min.

Tlanya.

Max.

Yuniti

BVDSS

Mokelikeli oa ho Aroha ha Mohloli oa Mokelikeli VGS=0V , ID=250uA

40

---

---

V

RDS(ON)

Static Drain-Source On-Resistance2 VGS=10V , ID=10A

---

4.5

6.5

VGS=4.5V , ID=5A

---

6.4

8.5

VGS(th)

Motlakase oa Heke oa Threshold VGS=VDS , ID =250uA

1.0

---

2.5

V

IDSS

Khale-Mohloli Leakage Current VDS=32V , VGS=0V , TJ=25℃

---

---

1

uA

VDS=32V , VGS=0V , TJ=55℃

---

---

5

IGSS

Heke-Mohloli Leakage Current VGS=±20V , VDS=0V

---

---

±100

nA

gfs

Fetela Transconductance VDS=10V , ID=5A

---

27

---

S

Qg

Kakaretso ea Tefiso ea Keiti (4.5V) VDS=20V , VGS=4.5V , ID=10A

---

20

---

nC

Qgs

Tefiso ea Heke-Mohloli

---

5.8

---

Qgd

Tefiso ea Heke-Drain

---

9.5

---

Td(ho)

Bulela Nako ea ho lieha VDD=15V , VGS=10V RG=3.3ΩID=1A

---

15.2

---

ns

Tr

Nako ea Tsoha

---

8.8

---

Td(e tima)

Nako ea ho lieha ho tima

---

74

---

Tf

Nako ea hoetla

---

7

---

Ciss

Matla a ho Kena VDS=15V , VGS=0V , f=1MHz

---

2354

---

pF

Coss

Bokhoni ba tlhahiso

---

215

---

Crss

Reverse Transfer Capacitance

---

175

---

IS

Mohloli o Tsoelang Pele Hona Joale1,5 VG=VD=0V , Matla a Hona Joale

---

---

70

A

VSD

Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃

---

---

1

V


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