WSD4098 Dual N-Channel 40V 22A DFN5*6-8 WINSOK MOSFET

tlhaloso e khuts'oane:

Ena ke banka ea matla a khoheli e iponahatsang ka lifono tsa Apple 'me ha e hloke ho kenya konopo.E kopanya 2.0/QC3.0/PA2.0/PD3.0/SCP/AFC ho kenya le ho hlahisa liprothokholo tsa ho tjhaja ka potlako.Ke sehlahisoa sa banka ea matla e se nang mohala se tsamaellanang le Apple/Samsung mobile phone synchronous boost/step-down converters, Li battery charger management, digital tube power sign, magnetic wireless charger le mesebetsi e meng.

Nomoro ea Mohlala:WSD4098

BVDSS:40V

RDSON:7.8mΩ

ID:22A

Channel:Ka bobeli N-Channel

Sephutheloana:DFN5*6-8

Lehlabula la Sehlahisoa:Motlakase oa WSD4098 MOSFET ke 40V, hona joale ke22A, khanyetso ke 7.8mΩ, mocha ke Dual N-Channel, 'me sephutheloana ke DFN5 * 6-8.

Lisebelisoa:Lisakerete tsa elektronike, ho tjhaja waelese, liinjini, li-drones, tlhokomelo ea bongaka, lijaja tsa koloi, lilaoli, lihlahisoa tsa digital, lisebelisoa tse nyenyane tsa ka tlung, lisebelisoa tsa motlakase tsa bareki.

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Tlhaloso e Akaretsang

WSD4098DN56 ke setsi se phahameng ka ho fetisisa sa Dual N-Ch MOSFET se nang le letsoalo le phahameng ka ho fetesisa la lisele, se fanang ka RDSON e ntle haholo le tefiso ea heke bakeng sa lits'ebetso tse ngata tsa synchronous buck converter.WSD4098DN56 e kopana le tlhoko ea RoHS le Green Product 100% EAS e netefalitsoeng ka ts'epo e felletseng e lumelletsoeng.

Likaroloana

Theknoloji e tsoetseng pele ea high cell density Trench, Super Low Gate Charge, Excellent CdV/dt effect e fokotseha, 100% EAS Guaranteed, Green Device ea Fumaneha

Lisebelisoa

High Frequency Point-of-Load Synchronous,Buck Converter bakeng sa MB/NB/UMPC/VGA,Networking DC-DC Power System,Load Switch,E-cigarette, tjhaja waelese, motors, drones, tlhokomelo ea bongaka, tjhaja koloi, lilaoli, digital lihlahisoa, lisebelisoa tse nyenyane tsa ntlo, lisebelisoa tsa motlakase tsa bareki.

nomoro ea thepa e tsamaellanang

AOS AON6884

Mekhahlelo ea bohlokoa

Letšoao	Paramethara		Lintlha	Yuniti
Lintlha tse tloaelehileng
VDSS	Mokelikeli-Mohloli oa Motlakase		40	V
VGSS	Gate-Mohloli Voltage		±20	V
TJ	Maximum Junction Temperature		150	°C
TSTG	Storage Mocheso Range		- ho tloha ho 55 ho isa ho 150	°C
IS	Diode Tsoela Pele Pele Hona Joale	TA=25°C	11.4	A
ID	Khala e Tsoelang Pele ea Hona Joale	TA=25°C	22	A
ID	Khala e Tsoelang Pele ea Hona Joale			A
		TA=70°C	22
Ke DM b	Pulse Drain Current Lekoa	TA=25°C	88	A
PD	Phello e Phahameng ea Matla	T. =25°C	25	W
PD	Phello e Phahameng ea Matla	TC=70°C	10	W
RqJL	Thermal Resistance-Junction to lead	Boemo bo tsitsitseng	5	°C/W
RqJA	Thermal Resistance-Junction to Ambient	t £10s	45	°C/W
RqJA	Thermal Resistance-Junction to Ambient	Naha e tsitsitseng b	90	°C/W
KE AS d	Avalanche ea Hona joale, Molumo o le mong	L=0.5mH	28	A
E AS d	Avalanche Energy, Single pulse	L=0.5mH	39.2	mJ

Letšoao	Paramethara	Maemo a Teko		Min.	Tlanya.	Max.	Yuniti
Litšobotsi tse tsitsitseng
BVDSS	Mokelikeli oa ho Aroha ha Mohloli oa Mokelikeli	VGS=0V, IDS=250mA		40	-	-	V
IDSS	Sekhahla sa Zero Gate Voltage Hona Joale	VDS=32V, VGS=0V		-	-	1	mA
IDSS	Sekhahla sa Zero Gate Voltage Hona Joale						mA
			TJ=85°C	-	-	30
VGS(th)	Motlakase oa Heke oa Threshold	VDS=VGS, IDS=250mA		1.2	1.8	2.5	V
IGSS	Gate Leakage Current	VGS=±20V, VDS=0V		-	-	±100	nA
R DS(ON) e	Drain-Source On-state Resistance	VGS=10V, IDS=14A		-	6.8	7.8	m W
R DS(ON) e	Drain-Source On-state Resistance	VGS=4.5V, IDS=12 A		-	9.0	11	m W
Litšobotsi tsa Diode
V SD e	Diode Forward Voltage	ISD=1A, VGS=0V		-	0.75	1.1	V
trr	Reverse Recovery Nako	ISD=20A, dlSD /dt=100A/µs		-	23	-	ns
Qrr	Reverse Recovery Tefiso	ISD=20A, dlSD /dt=100A/µs		-	13	-	nC
Litšobotsi tse Matla f
RG	Khanyetso ea Heke	VGS=0V,VDS=0V,F=1MHz		-	2.5	-	W
Ciss	Matla a ho Kena	VGS=0V, VDS=20V, Khafetsa=1.0MHz		-	1370	1781	pF
Coss	Bokhoni ba tlhahiso			-	317	-
Crss	Reverse Transfer Capacitance			-	96	-
td(ON)	Bulela Nako ea ho lieha	VDD =20V, RL=20W, IDS=1A, VGEN=10V, RG=6W		-	13.8	-	ns
tr	Bulela Nako ea ho Phahamisa			-	8	-
td( TIMA)	Nako ea ho lieha ho tima			-	30	-
tf	Nako ea hoetla ea ho tima			-	21	-
Litšobotsi tsa Tefiso ea Heke f
Qg	Kakaretso ea Tefiso ea Heke	VDS=20V, VGS=10V, IDS=6A		-	23	28	nC
Qg	Kakaretso ea Tefiso ea Heke	VDS=20V, VGS=4.5V, IDS=6A		-	22	-
Qgth	Tefiso ea Heke ea Threshold			-	2.6	-
Qgs	Tefiso ea Heke-Mohloli			-	4.7	-
Qgd	Tefiso ea Heke-Drain			-	3	-