WSD4280DN22 Dual P-channel -15V -4.6A DFN2X2-6L WINSOK MOSFET

lihlahisoa

WSD4280DN22 Dual P-channel -15V -4.6A DFN2X2-6L WINSOK MOSFET

tlhaloso e khuts'oane:

Nomoro ea Karolo:Setšoantšo sa WSD4280DN22

BVDSS:-15V

ID:-4.6A

RDSON:47mΩ 

Channel:Dual P-channel

Sephutheloana:DFN2X2-6L


Lintlha tsa Sehlahisoa

Kopo

Li-tag tsa Sehlahisoa

WINSOK MOSFET kakaretso ea sehlahisoa

Motlakase oa WSD4280DN22 MOSFET ke -15V, hona joale ke -4.6A, khanyetso ke 47mΩ, mocha ke Dual P-channel, 'me sephutheloana ke DFN2X2-6L.

WINSOK MOSFET libaka tsa kopo

Phetoho ea ho thibela mahlakore ka bobeli; Lisebelisoa tsa ho fetola DC-DC; Li-betri ea ho tjhaja; E-cigarette MOSFET, MOSFET ea ho tjhaja waelese, MOSFET ea ho tjhaja koloi, controller MOSFET, sehlahisoa sa dijithale MOSFET, lisebelisoa tse nyane tsa ka tlung MOSFET, lisebelisoa tsa elektroniki tsa bareki MOSFET.

WINSOK MOSFET e lumellana le linomoro tse ling tsa thepa ea brand

PANJIT MOSFET PJQ2815

MOSFET parameters

Letšoao

Paramethara

Lintlha

Diyuniti

VDS

Mokelikeli-Mohloli oa Motlakase

-15

V

VGS

Gate-Mohloli Voltage

±8

V

ID@Tc=25℃

Mokelikeli o Tsoelang Pele, VGS= -4,5V1 

-4.6

A

IDM

300μS Pulsed Drain ea Hona Joale, (VGS=-4.5V)

-15

A

PD 

Phallo ea Phallo ea Matla ka holimo ho TA = 25°C (Tlhokomeliso 2)

1.9

W

TSTG, TJ 

Storage Mocheso Range

- ho tloha ho 55 ho isa ho 150

RθJA

Thermal Resistance Junction-ambient1

65

℃/W

RθJC

Thermal Resistance Junction-Case1

50

℃/W

Litšobotsi tsa Motlakase (TJ=25 ℃, ntle le haeba ho boletsoe ka tsela e 'ngoe)

Letšoao

Paramethara

Maemo

Min.

Tlanya.

Max.

Yuniti

BVDSS 

Mokelikeli oa ho Aroha ha Mohloli oa Mokelikeli VGS=0V, keD=-250uA

-15

---

---

V

△BVDSS/△TJ

BVDSS Temperature Coefficient Ho buuoa ka 25 ℃ , ID=-1mA

---

-0.01

---

V/℃

RDS(ON)

Static Drain-Source On-Resistance2  VGS=-4.5V , keD=-1A

---

47

61

VGS=-2.5V , keD=-1A

---

61

80

VGS=-1.8V , keD=-1A

---

90

150

VGS(th)

Motlakase oa Heke oa Threshold VGS=VDS, keD=-250uA

-0.4

-0.62

-1.2

V

△VGS(th) 

VGS(th)Mocheso Coefficient

---

3.13

---

mV/℃

IDSS

Khale-Mohloli Leakage Current VDS=-10V , VGS=0V , TJ=25℃

---

---

-1

uA

VDS=-10V , VGS=0V , TJ=55℃

---

---

-5

IGSS

Heke-Mohloli Leakage Current VGS=±12V , VDS=0V

---

---

±100

nA

gfs

Fetela Transconductance VDS=-5V , keD=-1A

---

10

---

S

Rg 

Khanyetso ea Heke VDS=0V , VGS=0V , f=1MHz

---

2

---

Ω

Qg 

Kakaretso ea Tefiso ea Heke (-4.5V)

VDS=-10V , VGS=-4.5V , keD=-4.6A

---

9.5

---

nC

Qgs 

Tefiso ea Heke-Mohloli

---

1.4

---

Qgd 

Tefiso ea Heke-Drain

---

2.3

---

Td(ho)

Bulela Nako ea ho lieha VDD=-10V ,VGS=-4.5V , RG=1Ω

ID=-3.9A,

---

15

---

ns

Tr 

Nako ea Tsoha

---

16

---

Td(e tima)

Nako ea ho lieha ho tima

---

30

---

Tf 

Nako ea hoetla

---

10

---

Ciss 

Matla a ho Kena VDS=-10V , VGS=0V , f=1MHz

---

781

---

pF

Coss

Bokhoni ba tlhahiso

---

98

---

Crss 

Reverse Transfer Capacitance

---

96

---


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