WSD45N10GDN56 N-channel 100V 45A DFN5X6-8 WINSOK MOSFET

lihlahisoa

WSD45N10GDN56 N-channel 100V 45A DFN5X6-8 WINSOK MOSFET

tlhaloso e khuts'oane:

Nomoro ea Karolo:Setšoantšo sa WSD45N10GDN56

BVDSS:100V

ID:45A

RDSON:14.5mΩ

Channel:N-chalero

Sephutheloana:DFN5X6-8


Lintlha tsa Sehlahisoa

Kopo

Li-tag tsa Sehlahisoa

WINSOK MOSFET kakaretso ea sehlahisoa

Matla a WSD45N10GDN56 MOSFET ke 100V, ha joale ke 45A, khanyetso ke 14.5mΩ, mocha ke N-channel, 'me sephutheloana ke DFN5X6-8.

WINSOK MOSFET libaka tsa kopo

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WINSOK MOSFET e lumellana le linomoro tse ling tsa thepa ea brand

AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.PANJIT MOSFET PJQ5476AL.POTENS Semiconductor MOSFET PDC966X.

MOSFET parameters

Letšoao

Paramethara

Lintlha

Diyuniti

VDS

Mokelikeli-Mohloli oa Motlakase

100

V

VGS

Gate-Sourka Voltage

±20

V

ID@TC=25

Mokelikeli o Tsoelang Pele, VGS@10V

45

A

ID@TC=100

Mokelikeli o Tsoelang Pele, VGS@10V

33

A

ID@TA=25

Mokelikeli o Tsoelang Pele, VGS@10V

12

A

ID@TA=70

Mokelikeli o Tsoelang Pele, VGS@10V

9.6

A

IDMa

Pulsed Drain Current

130

A

EASb

Matla a Avalanche a Pulse e le 'ngoe

169

mJ

IASb

Avalanche Current

26

A

PD@TC=25

Kakaretso ea Phallo ea Matla

95

W

PD@TA=25

Kakaretso ea Phallo ea Matla

5.0

W

TSTG

Storage Mocheso Range

- ho tloha ho 55 ho isa ho 150

TJ

Operating Junction Temperature Range

- ho tloha ho 55 ho isa ho 150

 

Letšoao

Paramethara

Maemo

Min.

Tlanya.

Max.

Yuniti

BVDSS

Mokelikeli oa ho Aroha ha Mohloli oa Mokelikeli VGS=0V, keD=250uA

100

---

---

V

BVDSS/△TJ

BVDSS Temperature Coefficient Sheba ho 25, keD=1mA

---

0.0

---

V/

RDS(ON)d

Static Drain-Source On-Resistance2 VGS=10V, keD=26A

---

14.5

17.5

mΩ

VGS(th)

Motlakase oa Heke oa Threshold VGS=VDS, keD=250uA

2.0

3.0

4.0

V

VGS(th)

VGS(th)Mocheso Coefficient

---

-5   mV/

IDSS

Khale-Mohloli Leakage Current VDS=80V , VGS=0V , TJ=25

---

- 1

uA

VDS=80V , VGS=0V , TJ=55

---

- 30

IGSS

Heke-Mohloli Leakage Current VGS=±20V, VDS=0V

---

- ±100

nA

Rge

Khanyetso ea Heke VDS=0V , VGS=0V , f=1MHz

---

1.0

---

Ω

Qge

Kakaretso ea Tefiso ea Heke (10V) VDS=50V , VGS=10V, keD=26A

---

42

59

nC

Qgse

Tefiso ea Heke-Mohloli

---

12

--

Qgde

Tefiso ea Heke-Drain

---

12

---

Td(ho)e

Bulela Nako ea ho lieha VDD=30V , VGEN=10V , RG=6Ω

ID=1A ,RL=30Ω

---

19

35

ns

Sefate

Nako ea Tsoha

---

9

17

Td(e tima)e

Nako ea ho lieha ho tima

---

36

65

Tfe

Nako ea hoetla

---

22

40

Cisse

Matla a ho Kena VDS=30V , VGS=0V , f=1MHz

---

1800

---

pF

Cosse

Bokhoni ba tlhahiso

---

215

---

Crsse

Reverse Transfer Capacitance

---

42

---


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