WSD45N10GDN56 N-channel 100V 45A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET kakaretso ea sehlahisoa
Matla a WSD45N10GDN56 MOSFET ke 100V, ha joale ke 45A, khanyetso ke 14.5mΩ, mocha ke N-channel, 'me sephutheloana ke DFN5X6-8.
WINSOK MOSFET libaka tsa kopo
E-cigarettes MOSFET, wireless charger MOSFET, motors MOSFET, drones MOSFET, medical care MOSFET, car charger MOSFET, controller MOSFET, dijithale dihlahiswa MOSFET, lisebelisoa tse nyenyane tsa ka tlung MOSFET, moreki electronics MOSFET.
WINSOK MOSFET e lumellana le linomoro tse ling tsa thepa ea brand
AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.PANJIT MOSFET PJQ5476AL.POTENS Semiconductor MOSFET PDC966X.
MOSFET parameters
Letšoao | Paramethara | Lintlha | Diyuniti |
VDS | Mokelikeli-Mohloli oa Motlakase | 100 | V |
VGS | Gate-Sourka Voltage | ±20 | V |
ID@TC=25℃ | Mokelikeli o Tsoelang Pele, VGS@10V | 45 | A |
ID@TC=100℃ | Mokelikeli o Tsoelang Pele, VGS@10V | 33 | A |
ID@TA=25℃ | Mokelikeli o Tsoelang Pele, VGS@10V | 12 | A |
ID@TA=70℃ | Mokelikeli o Tsoelang Pele, VGS@10V | 9.6 | A |
IDMa | Pulsed Drain Current | 130 | A |
EASb | Matla a Avalanche a Pulse e le 'ngoe | 169 | mJ |
IASb | Avalanche Current | 26 | A |
PD@TC=25℃ | Kakaretso ea Phallo ea Matla | 95 | W |
PD@TA=25℃ | Kakaretso ea Phallo ea Matla | 5.0 | W |
TSTG | Storage Mocheso Range | - ho tloha ho 55 ho isa ho 150 | ℃ |
TJ | Operating Junction Temperature Range | - ho tloha ho 55 ho isa ho 150 | ℃ |
Letšoao | Paramethara | Maemo | Min. | Tlanya. | Max. | Yuniti |
BVDSS | Mokelikeli oa ho Aroha ha Mohloli oa Mokelikeli | VGS=0V, keD=250uA | 100 | --- | --- | V |
△BVDSS/△TJ | BVDSS Temperature Coefficient | Sheba ho 25℃, keD=1mA | --- | 0.0 | --- | V/℃ |
RDS(ON)d | Static Drain-Source On-Resistance2 | VGS=10V, keD=26A | --- | 14.5 | 17.5 | mΩ |
VGS(th) | Motlakase oa Heke oa Threshold | VGS=VDS, keD=250uA | 2.0 | 3.0 | 4.0 | V |
△VGS(th) | VGS(th)Mocheso Coefficient | --- | -5 | mV/℃ | ||
IDSS | Khale-Mohloli Leakage Current | VDS=80V , VGS=0V , TJ=25℃ | --- | - | 1 | uA |
VDS=80V , VGS=0V , TJ=55℃ | --- | - | 30 | |||
IGSS | Heke-Mohloli Leakage Current | VGS=±20V, VDS=0V | --- | - | ±100 | nA |
Rge | Khanyetso ea Heke | VDS=0V , VGS=0V , f=1MHz | --- | 1.0 | --- | Ω |
Qge | Kakaretso ea Tefiso ea Heke (10V) | VDS=50V , VGS=10V, keD=26A | --- | 42 | 59 | nC |
Qgse | Tefiso ea Heke-Mohloli | --- | 12 | -- | ||
Qgde | Tefiso ea Heke-Drain | --- | 12 | --- | ||
Td(ho)e | Bulela Nako ea ho lieha | VDD=30V , VGEN=10V , RG=6Ω ID=1A ,RL=30Ω | --- | 19 | 35 | ns |
Sefate | Nako ea Tsoha | --- | 9 | 17 | ||
Td(e tima)e | Nako ea ho lieha ho tima | --- | 36 | 65 | ||
Tfe | Nako ea hoetla | --- | 22 | 40 | ||
Cisse | Matla a ho Kena | VDS=30V , VGS=0V , f=1MHz | --- | 1800 | --- | pF |
Cosse | Bokhoni ba tlhahiso | --- | 215 | --- | ||
Crsse | Reverse Transfer Capacitance | --- | 42 | --- |