WSD6040DN56 N-channel 60V 36A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET kakaretso ea sehlahisoa
Motlakase oa WSD6040DN56 MOSFET ke 60V, hona joale ke 36A, khanyetso ke 14mΩ, mocha ke N-channel, 'me sephutheloana ke DFN5X6-8.
WINSOK MOSFET libaka tsa kopo
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WINSOK MOSFET e lumellana le linomoro tse ling tsa thepa ea brand
AOS MOSFET AON6264C,AON6264E,AON6266E,AONS6662.STMicroelectronics MOSFET STL8DN6LF6AG.PANJIT MOSFET PSMQC12N6LS1.POTENS Semiconductor MOSFET PDC6964X.
MOSFET parameters
| Letšoao | Paramethara | Lintlha | Diyuniti | ||
| VDS | Mokelikeli-Mohloli oa Motlakase | 60 | V | ||
| VGS | Gate-Mohloli Voltage | ±20 | V | ||
| ID | Khala e Tsoelang Pele ea Hona Joale | TC=25°C | 36 | A | |
| TC=100°C | 22 | ||||
| ID | Khala e Tsoelang Pele ea Hona Joale | TA=25°C | 8.4 | A | |
| TA=100°C | 6.8 | ||||
| IDMa | Pulsed Drain Current | TC=25°C | 140 | A | |
| PD | Phello e Phahameng ea Matla | TC=25°C | 37.8 | W | |
| TC=100°C | 15.1 | ||||
| PD | Phello e Phahameng ea Matla | TA=25°C | 2.08 | W | |
| TA=70°C | 1.33 | ||||
| IAS c | Avalanche ea Hona joale, Molumo o le mong | L=0.5mH | 16 | A | |
| EASc | Matla a Avalanche a Pulse e le 'ngoe | L=0.5mH | 64 | mJ | |
| IS | Diode Tsoela Pele Pele Hona Joale | TC=25°C | 18 | A | |
| TJ | Maximum Junction Temperature | 150 | ℃ | ||
| TSTG | Storage Mocheso Range | - ho tloha ho 55 ho isa ho 150 | ℃ | ||
| RJAb | Thermal Resistance Junction ho ambient | Boemo bo tsitsitseng | 60 | ℃/W | |
| RθJC | Thermal Resistance-Junction to Case | Boemo bo tsitsitseng | 3.3 | ℃/W | |
| Letšoao | Paramethara | Maemo | Min. | Tlanya. | Max. | Yuniti | |
| E tsitsitseng | |||||||
| V(BR)DSS | Mokelikeli oa ho Aroha ha Mohloli oa Mokelikeli | VGS = 0V, ID = 250μA | 60 | V | |||
| IDSS | Sekhahla sa Zero Gate Voltage Hona Joale | VDS = 48 V, VGS = 0V | 1 | µA | |||
| TJ=85°C | 30 | ||||||
| IGSS | Gate Leakage Current | VGS = ± 20V, VDS = 0V | ±100 | nA | |||
| Ka Litšobotsi | |||||||
| VGS(TH) | Motlakase oa Heke oa Threshold | VGS = VDS, IDS = 250µA | 1 | 1.6 | 2.5 | V | |
| RDS(e butswe)d | Drain-Source On-state Resistance | VGS = 10V, ID = 25A | 14 | 17.5 | mΩ | ||
| VGS = 4.5V, ID = 20A | 19 | 22 | mΩ | ||||
| Ho fetoha | |||||||
| Qg | Kakaretso ea Tefiso ea Heke | VDS=30V VGS=10V ID=25A | 42 | nC | |||
| Qgs | Tefiso ea Heke-Bolila | 6.4 | nC | ||||
| Qgd | Tefiso ea Heke-Drain | 9.6 | nC | ||||
| td (ka) | Bulela Nako ea ho lieha | VGEN=10V VDD=30V ID=1A RG=6Ω RL=30Ω | 17 | ns | |||
| tr | Bulela Nako ea ho Phahamisa | 9 | ns | ||||
| td(tima) | Nako ea ho lieha ho tima | 58 | ns | ||||
| tf | Nako ea hoetla ea ho tima | 14 | ns | ||||
| Rg | Kganyetso ya gat | VGS=0V, VDS=0V, f=1MHz | 1.5 | Ω | |||
| Matla | |||||||
| Ciss | Ka Bokhoni | VGS=0V VDS=30V f=1MHz | 2100 | pF | |||
| Coss | Out Capacitance | 140 | pF | ||||
| Crss | Reverse Transfer Capacitance | 100 | pF | ||||
| Litšobotsi tsa Drain-Source Diode le Litekanyetso tse phahameng | |||||||
| IS | Mohloli o Tsoelang Pele Hona Joale | VG=VD=0V , Matla a Hona Jwale | 18 | A | |||
| ISM | Mohloli oa Pulsed Current3 | 35 | A | ||||
| VSDd | Diode Forward Voltage | ISD = 20A , VGS=0V | 0.8 | 1.3 | V | ||
| trr | Reverse Recovery Nako | ISD=25A, dlSD/dt=100A/µs | 27 | ns | |||
| Qrr | Reverse Recovery Tefiso | 33 | nC | ||||
