WSD6060DN56 N-channel 60V 65A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET kakaretso ea sehlahisoa
Motlakase oa WSD6060DN56 MOSFET ke 60V, hona joale ke 65A, khanyetso ke 7.5mΩ, mocha ke N-channel, 'me sephutheloana ke DFN5X6-8.
WINSOK MOSFET libaka tsa kopo
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WINSOK MOSFET e lumellana le linomoro tse ling tsa thepa ea brand
STMicroelectronics MOSFET STL5DN6F7.PANJIT MOSFET PSMQC73N6NS1.POTENS Semiconductor MOSFET PDC696X.
MOSFET parameters
| Letšoao | Paramethara | Lintlha | Yuniti | |
| Lintlha tse tloaelehileng | ||||
| VDSS | Mokelikeli-Mohloli oa Motlakase | 60 | V | |
| VGSS | Gate-Mohloli Voltage | ±20 | V | |
| TJ | Maximum Junction Temperature | 150 | °C | |
| TSTG | Storage Mocheso Range | - ho tloha ho 55 ho isa ho 150 | °C | |
| IS | Diode Tsoela Pele Pele Hona Joale | Tc=25°C | 30 | A |
| ID | Khala e Tsoelang Pele ea Hona Joale | Tc=25°C | 65 | A |
| Tc=70°C | 42 | |||
| Ke DM b | Pulse Drain Current Lekoa | Tc=25°C | 250 | A |
| PD | Phello e Phahameng ea Matla | Tc=25°C | 62.5 | W |
| TC=70°C | 38 | |||
| RqJL | Thermal Resistance-Junction to lead | Boemo bo tsitsitseng | 2.1 | °C/W |
| RqJA | Thermal Resistance-Junction to Ambient | t £ 10s | 45 | °C/W |
| Boemo bo tsitsitsengb | 50 | |||
| KE JOALOKA d | Avalanche ea Hona joale, Molumo o le mong | L=0.5mH | 18 | A |
| E AS d | Avalanche Energy, Single pulse | L=0.5mH | 81 | mJ |
| Letšoao | Paramethara | Maemo a Teko | Min. | Tlanya. | Max. | Yuniti | |
| Litšobotsi tse tsitsitseng | |||||||
| BVDSS | Mokelikeli oa ho Aroha ha Mohloli oa Mokelikeli | VGS=0V, keDS=250mA | 60 | - | - | V | |
| IDSS | Sekhahla sa Zero Gate Voltage Hona Joale | VDS=48V, VGS=0V | - | - | 1 | mA | |
| TJ=85°C | - | - | 30 | ||||
| VGS(th) | Motlakase oa Heke oa Threshold | VDS=VGS, keDS=250mA | 1.2 | 1.5 | 2.5 | V | |
| IGSS | Gate Leakage Current | VGS=±20V, VDS=0V | - | - | ±100 | nA | |
| R DS(ON) 3 | Drain-Source On-state Resistance | VGS=10V, keDS=20A | - | 7.5 | 10 | m W | |
| VGS=4.5V, keDS=15 A | - | 10 | 15 | ||||
| Litšobotsi tsa Diode | |||||||
| V SD | Diode Forward Voltage | ISD=1A, VGS=0V | - | 0.75 | 1.2 | V | |
| trr | Reverse Recovery Nako | ISD=20A, dlSD /dt=100A/µs | - | 42 | - | ns | |
| Qrr | Reverse Recovery Tefiso | - | 36 | - | nC | ||
| Litšobotsi tse Matla3,4 | |||||||
| RG | Khanyetso ea Heke | VGS=0V,VDS=0V,F=1MHz | - | 1.5 | - | W | |
| Ciss | Matla a ho Kena | VGS=0V, VDS=30V, F=1.0MHz Ω | - | 1340 | - | pF | |
| Coss | Bokhoni ba tlhahiso | - | 270 | - | |||
| Crss | Reverse Transfer Capacitance | - | 40 | - | |||
| td(ON) | Bulela Nako ea ho lieha | VDD=30V, IDS=1A, VGEN=10V, RG=6Ω. | - | 15 | - | ns | |
| tr | Bulela Nako ea ho Phahamisa | - | 6 | - | |||
| td( TIMA) | Nako ea ho lieha ho tima | - | 33 | - | |||
| tf | Nako ea hoetla ea ho tima | - | 30 | - | |||
| Litšobotsi tsa Tefiso ea Heke 3,4 | |||||||
| Qg | Kakaretso ea Tefiso ea Heke | VDS=30V, VGS=4.5V, keDS=20A | - | 13 | - | nC | |
| Qg | Kakaretso ea Tefiso ea Heke | VDS=30V, VGS=10V, IDS=20A | - | 27 | - | ||
| Qgth | Tefiso ea Heke ea Threshold | - | 4.1 | - | |||
| Qgs | Tefiso ea Heke-Mohloli | - | 5 | - | |||
| Qgd | Tefiso ea Heke-Drain | - | 4.2 | - | |||
