WSD6070DN56 N-channel 60V 80A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET kakaretso ea sehlahisoa
Motlakase oa WSD6070DN56 MOSFET ke 60V, hona joale ke 80A, khanyetso ke 7.3mΩ, mocha ke N-channel, 'me sephutheloana ke DFN5X6-8.
WINSOK MOSFET libaka tsa kopo
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WINSOK MOSFET e lumellana le linomoro tse ling tsa thepa ea brand
POTENS Semiconductor MOSFET PDC696X.
MOSFET parameters
| Letšoao | Paramethara | Lintlha | Diyuniti |
| VDS | Mokelikeli-Mohloli oa Motlakase | 60 | V |
| VGS | Gate-Sourka Voltage | ±20 | V |
| TJ | Maximum Junction Temperature | 150 | °C |
| ID | Storage Mocheso Range | - ho tloha ho 55 ho isa ho 150 | °C |
| IS | Diode e Tsoelang Pele Hajoale, TC=25°C | 80 | A |
| ID | Mokelikeli o Tsoelang Pele, VGS=10V,TC=25°C | 80 | A |
| Mokelikeli o Tsoelang Pele, VGS=10V,TC=100°C | 66 | A | |
| IDM | Pulsed Drain Current, TC=25°C | 300 | A |
| PD | Phello e Felletseng ea Matla, TC=25°C | 150 | W |
| Phello e Felletseng ea Matla, TC=100°C | 75 | W | |
| RJA | Thermal Resistance-Junction to Ambient ,t =10s ̀ | 50 | °C/W |
| Thermal Resistance-Junction to Ambient,Stay State | 62.5 | °C/W | |
| RqJC | Thermal Resistance-Junction to Case | 1 | °C/W |
| IAS | Avalanche ea Hona joale, Molumo o le mong, L=0.5mH | 30 | A |
| EAS | Matla a Avalanche, Puse e le 'ngoe,L=0.5mH | 225 | mJ |
| Letšoao | Paramethara | Maemo | Min. | Tlanya. | Max. | Yuniti |
| BVDSS | Mokelikeli oa ho Aroha ha Mohloli oa Mokelikeli | VGS=0V, keD=250uA | 60 | --- | --- | V |
| △BVDSS/△TJ | BVDSSMocheso Coefficient | Sheba ho 25℃, keD=1mA | --- | 0.043 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , keD=40A | --- | 7.0 | 9.0 | mΩ |
| VGS(th) | Motlakase oa Heke oa Threshold | VGS=VDS, keD=250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS(th) | VGS(th)Mocheso Coefficient | --- | -6,94 | --- | mV/℃ | |
| IDSS | Khale-Mohloli Leakage Current | VDS=48V , VGS=0V , TJ=25℃ | --- | --- | 2 | uA |
| VDS=48V , VGS=0V , TJ=55℃ | --- | --- | 10 | |||
| IGSS | Heke-Mohloli Leakage Current | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
| gfs | Fetela Transconductance | VDS=5V, keD=20A | --- | 50 | --- | S |
| Rg | Khanyetso ea Heke | VDS=0V , VGS=0V , f=1MHz | --- | 1.0 | --- | Ω |
| Qg | Kakaretso ea Tefiso ea Heke (10V) | VDS=30V , VGS=10V, keD=40A | --- | 48 | --- | nC |
| Qgs | Tefiso ea Heke-Mohloli | --- | 17 | --- | ||
| Qgd | Tefiso ea Heke-Drain | --- | 12 | --- | ||
| Td(ho) | Bulela Nako ea ho lieha | VDD=30V , VGEN=10V , RG=1Ω, keD=1A ,RL=15Ω. | --- | 16 | --- | ns |
| Tr | Nako ea Tsoha | --- | 10 | --- | ||
| Td(e tima) | Nako ea ho lieha ho tima | --- | 40 | --- | ||
| Tf | Nako ea hoetla | --- | 35 | --- | ||
| Ciss | Matla a ho Kena | VDS=30V , VGS=0V , f=1MHz | --- | 2680 | --- | pF |
| Coss | Bokhoni ba tlhahiso | --- | 386 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 160 | --- |
