WSD60N10GDN56 N-channel 100V 60A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET kakaretso ea sehlahisoa
Motlakase oa WSD60N10GDN56 MOSFET ke 100V, hona joale ke 60A, khanyetso ke 8.5mΩ, mocha ke N-channel, 'me sephutheloana ke DFN5X6-8.
WINSOK MOSFET libaka tsa kopo
E-cigarettes MOSFET, wireless charger MOSFET, motors MOSFET, drones MOSFET, medical care MOSFET, car charger MOSFET, controller MOSFET, dijithale dihlahiswa MOSFET, lisebelisoa tse nyenyane tsa ka tlung MOSFET, moreki electronics MOSFET.
Libaka tsa ts'ebeliso ea MOSFETWINSOK MOSFET e lumellana le linomoro tse ling tsa thepa ea mofuta
AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.Onsemi,FAIRCHILD MOSFET NTMFS6B14N.VISHAY MOSFET SiR84DP,SiR87ADP.INFFETNS3BROSTONSHIN3MOSFETN19MOSFET.IR PH8R8ANH.PANJIT MOSFET PJQ5478A.NIKO-SEM MOSFET P81BKA.POTENS Semiconductor MOSFET PDC92X.
MOSFET parameters
| Letšoao | Paramethara | Lintlha | Diyuniti |
| VDS | Mokelikeli-Mohloli oa Motlakase | 100 | V |
| VGS | Gate-Mohloli Voltage | ±20 | V |
| ID@TC=25℃ | Khala e Tsoelang Pele ea Hona Joale | 60 | A |
| IDP | Pulsed Drain Current | 210 | A |
| EAS | Avalanche Energy, Single pulse | 100 | mJ |
| PD@TC=25℃ | Kakaretso ea Phallo ea Matla | 125 | W |
| TSTG | Storage Mocheso Range | - ho tloha ho 55 ho isa ho 150 | ℃ |
| TJ | Operating Junction Temperature Range | - ho tloha ho 55 ho isa ho 150 | ℃ |
| Letšoao | Paramethara | Maemo | Min. | Tlanya. | Max. | Yuniti |
| BVDSS | Mokelikeli oa ho Aroha ha Mohloli oa Mokelikeli | VGS=0V, keD=250uA | 100 | --- | --- | V |
| Static Drain-Source On-Resistance | VGS=10V,ID=10A. | --- | 8.5 | 10. 0 | mΩ | |
| RDS(ON) | VGS=4.5V,ID=10A. | --- | 9.5 | 12. 0 | mΩ | |
| VGS(th) | Motlakase oa Heke oa Threshold | VGS=VDS, keD=250uA | 1.0 | --- | 2.5 | V |
| IDSS | Khale-Mohloli Leakage Current | VDS=80V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| IGSS | Heke-Mohloli Leakage Current | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
| Qg | Kakaretso ea Tefiso ea Heke (10V) | VDS=50V , VGS=10V, keD=25A | --- | 49.9 | --- | nC |
| Qgs | Tefiso ea Heke-Mohloli | --- | 6.5 | --- | ||
| Qgd | Tefiso ea Heke-Drain | --- | 12.4 | --- | ||
| Td(ho) | Bulela Nako ea ho lieha | VDD=50V , VGS=10V ,RG=2.2Ω, keD=25A | --- | 20.6 | --- | ns |
| Tr | Nako ea Tsoha | --- | 5 | --- | ||
| Td(e tima) | Nako ea ho lieha ho tima | --- | 51.8 | --- | ||
| Tf | Nako ea hoetla | --- | 9 | --- | ||
| Ciss | Matla a ho Kena | VDS=50V , VGS=0V , f=1MHz | --- | 2604 | --- | pF |
| Coss | Bokhoni ba tlhahiso | --- | 362 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 6.5 | --- | ||
| IS | Mohloli o Tsoelang Pele Hona Joale | VG=VD=0V , Matla a Hona Joale | --- | --- | 60 | A |
| ISP | Mohloli oa Pulsed Current | --- | --- | 210 | A | |
| VSD | Diode Forward Voltage | VGS=0V, keS=12A , TJ=25℃ | --- | --- | 1.3 | V |
| trr | Reverse Recovery Nako | IF=12A,dI/dt=100A/µs,TJ=25℃ | --- | 60.4 | --- | nS |
| Qrr | Reverse Recovery Tefiso | --- | 106.1 | --- | nC |
