WSD60N12GDN56 N-channel 120V 70A DFN5X6-8 WINSOK MOSFET

lihlahisoa

WSD60N12GDN56 N-channel 120V 70A DFN5X6-8 WINSOK MOSFET

tlhaloso e khuts'oane:

Nomoro ea Karolo:Setšoantšo sa WSD60N12GDN56

BVDSS:120V

ID:70A

RDSON:10mΩ

Channel:N-chalero

Sephutheloana:DFN5X6-8


Lintlha tsa Sehlahisoa

Kopo

Li-tag tsa Sehlahisoa

WINSOK MOSFET kakaretso ea sehlahisoa

Motlakase oa WSD60N12GDN56 MOSFET ke 120V, hona joale ke 70A, khanyetso ke 10mΩ, mocha ke N-channel, 'me sephutheloana ke DFN5X6-8.

WINSOK MOSFET libaka tsa kopo

Thepa ea bongaka MOSFET, drones MOSFET, PD phepelo ea matla MOSFET, LED phepelo ea matla MOSFET, thepa indasteri MOSFET.

Libaka tsa ts'ebeliso ea MOSFETWINSOK MOSFET e lumellana le linomoro tse ling tsa thepa ea mofuta

AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.PANJIT MOSFET PSMQC76N12LS1.POTENS Semiconductor MOSFET PDC974X.

MOSFET parameters

Letšoao

Paramethara

Lintlha

Diyuniti

VDS

Mokelikeli-Mohloli oa Motlakase

120

V

VGS

Gate-Mohloli Voltage

±20

V

ID@TC=25℃

Khala e Tsoelang Pele ea Hona Joale

70

A

IDP

Pulsed Drain Current

150

A

EAS

Avalanche Energy, Single pulse

53.8

mJ

PD@TC=25℃

Kakaretso ea Phallo ea Matla

140

W

TSTG

Storage Mocheso Range

- ho tloha ho 55 ho isa ho 150

TJ 

Operating Junction Temperature Range

- ho tloha ho 55 ho isa ho 150

 

Letšoao

Paramethara

Maemo

Min.

Tlanya.

Max.

Yuniti

BVDSS 

Mokelikeli oa ho Aroha ha Mohloli oa Mokelikeli VGS=0V, keD=250uA

120

---

---

V

  Static Drain-Source On-Resistance VGS=10V,ID=10A.

---

10

15

RDS(ON)

VGS=4.5V,ID=10A.

---

18

25

VGS(th)

Motlakase oa Heke oa Threshold VGS=VDS, keD=250uA

1.2

---

2.5

V

IDSS

Khale-Mohloli Leakage Current VDS=80V , VGS=0V , TJ=25℃

---

---

1

uA

IGSS

Heke-Mohloli Leakage Current VGS=±20V , VDS=0V

---

---

±100

nA

Qg 

Kakaretso ea Tefiso ea Heke (10V) VDS=50V , VGS=10V, keD=25A

---

33

---

nC

Qgs 

Tefiso ea Heke-Mohloli

---

5.6

---

Qgd 

Tefiso ea Heke-Drain

---

7.2

---

Td(ho)

Bulela Nako ea ho lieha VDD=50V , VGS=10V ,

RG=2Ω, keD=25A

---

22

---

ns

Tr 

Nako ea Tsoha

---

10

---

Td(e tima)

Nako ea ho lieha ho tima

---

85

---

Tf 

Nako ea hoetla

---

112

---

Ciss 

Matla a ho Kena VDS=50V , VGS=0V , f=1MHz

---

2640

---

pF

Coss

Bokhoni ba tlhahiso

---

330

---

Crss 

Reverse Transfer Capacitance

---

11

---

IS 

Mohloli o Tsoelang Pele Hona Joale VG=VD=0V , Matla a Hona Joale

---

---

50

A

ISP

Mohloli oa Pulsed Current

---

---

150

A

VSD

Diode Forward Voltage VGS=0V, keS=12A , TJ=25℃

---

---

1.3

V

trr 

Reverse Recovery Nako IF=25A,dI/dt=100A/µs,TJ=25℃

---

62

---

nS

Qrr 

Reverse Recovery Tefiso

---

135

---

nC

 


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