WSD75100DN56 N-channel 75V 100A DFN5X6-8 WINSOK MOSFET

lihlahisoa

WSD75100DN56 N-channel 75V 100A DFN5X6-8 WINSOK MOSFET

tlhaloso e khuts'oane:

Nomoro ea Karolo:WSD75100DN56

BVDSS:75V

ID:100A

RDSON:5.3mΩ 

Channel:N-lekanale

Sephutheloana:DFN5X6-8


Lintlha tsa Sehlahisoa

Kopo

Li-tag tsa Sehlahisoa

WINSOK MOSFET kakaretso ea sehlahisoa

Motlakase oa WSD75100DN56 MOSFET ke 75V, hona joale ke 100A, khanyetso ke 5.3mΩ, mocha ke N-channel, 'me sephutheloana ke DFN5X6-8.

WINSOK MOSFET libaka tsa kopo

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WINSOK MOSFET e lumellana le linomoro tse ling tsa thepa ea brand

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MOSFET parameters

Letšoao

Paramethara

Lintlha

Diyuniti

VDS

Mokelikeli-Mohloli oa Motlakase

75

V

VGS

Gate-Sourka Voltage

±25

V

TJ

Maximum Junction Temperature

150

°C

ID

Storage Mocheso Range

- ho tloha ho 55 ho isa ho 150

°C

IS

Diode e Tsoelang Pele Hajoale, TC=25°C

50

A

ID

Mokelikeli o Tsoelang Pele, VGS=10V,TC=25°C

100

A

Mokelikeli o Tsoelang Pele, VGS=10V,TC=100°C

73

A

IDM

Pulsed Drain Current, TC=25°C

400

A

PD

Phello e Felletseng ea Matla, TC=25°C

155

W

Phello e Felletseng ea Matla, TC=100°C

62

W

RJA

Thermal Resistance-Junction to Ambient ,t =10s ̀

20

°C

Thermal Resistance-Junction to Ambient,Stay State

60

°C

RqJC

Thermal Resistance-Junction to Case

0.8

°C

IAS

Avalanche ea Hona joale, Molumo o le mong, L=0.5mH

30

A

EAS

Matla a Avalanche, Puse e le 'ngoe,L=0.5mH

225

mJ

 

Letšoao

Paramethara

Maemo

Min.

Tlanya.

Max.

Yuniti

BVDSS

Mokelikeli oa ho Aroha ha Mohloli oa Mokelikeli VGS=0V, keD=250uA

75

---

---

V

BVDSS/△TJ

BVDSSMocheso Coefficient Sheba ho 25, keD=1mA

---

0.043

---

V/

RDS(ON)

Static Drain-Source On-Resistance2 VGS=10V , keD=25A

---

5.3

6.4

mΩ

VGS(th)

Motlakase oa Heke oa Threshold VGS=VDS, keD=250uA

2.0

3.0

4.0

V

VGS(th)

VGS(th)Mocheso Coefficient

---

-6,94

---

mV/

IDSS

Khale-Mohloli Leakage Current VDS=48V , VGS=0V , TJ=25

---

---

2

uA

VDS=48V , VGS=0V , TJ=55

---

---

10

IGSS

Heke-Mohloli Leakage Current VGS=±20V, VDS=0V

---

---

±100

nA

gfs

Fetela Transconductance VDS=5V, keD=20A

---

50

---

S

Rg

Khanyetso ea Heke VDS=0V , VGS=0V , f=1MHz

---

1.0

2

Ω

Qg

Kakaretso ea Tefiso ea Heke (10V) VDS=20V , VGS=10V, keD=40A

---

65

85

nC

Qgs

Tefiso ea Heke-Mohloli

---

20

---

Qgd

Tefiso ea Heke-Drain

---

17

---

Td(ho)

Bulela Nako ea ho lieha VDD=30V , VGEN=10V , RG=1Ω, keD=1A ,RL=15Ω.

---

27

49

ns

Tr

Nako ea Tsoha

---

14

26

Td(e tima)

Nako ea ho lieha ho tima

---

60

108

Tf

Nako ea hoetla

---

37

67

Ciss

Matla a ho Kena VDS=20V , VGS=0V , f=1MHz

3450

3500 4550

pF

Coss

Bokhoni ba tlhahiso

245

395

652

Crss

Reverse Transfer Capacitance

100

195

250


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