WSD75N12GDN56 N-channel 120V 75A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET kakaretso ea sehlahisoa
Motlakase oa WSD75N12GDN56 MOSFET ke 120V, hona joale ke 75A, khanyetso ke 6mΩ, mocha ke N-channel, 'me sephutheloana ke DFN5X6-8.
WINSOK MOSFET libaka tsa kopo
Thepa ea bongaka ea MOSFET, drones MOSFET, PD phepelo ea matla MOSFET, lisebelisoa tsa motlakase tsa LED MOSFET, lisebelisoa tsa indasteri MOSFET.
Libaka tsa ts'ebeliso ea MOSFETWINSOK MOSFET e lumellana le linomoro tse ling tsa thepa ea mofuta
AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.PANJIT MOSFET PSMQC76N12LS1.
MOSFET parameters
Letšoao | Paramethara | Lintlha | Diyuniti |
VDSS | Mokelikeli oa Mohloli oa Mohloli | 120 | V |
VGS | Gate-to-Mohloli Voltage | ±20 | V |
ID | 1 Mokelikeli o Tsoelang Pele oa Hona Joale (Tc=25℃) | 75 | A |
ID | 1 Mokelikeli o Tsoelang Pele oa Hona Joale (Tc=70℃) | 70 | A |
IDM | Pulsed Drain Current | 320 | A |
IAR | Leqhubu le le leng la sekhahla sa sekhahla sa maqhubu a sekhahla | 40 | A |
EASa | Matla a leqhubu le le leng la pulse avalanche | 240 | mJ |
PD | Pheliso ea Matla | 125 | W |
TJ, Tst | Operating Junction le Storage Temperature Range | - ho tloha ho 55 ho isa ho 150 | ℃ |
TL | Boholo ba Mocheso bakeng sa Soldering | 260 | ℃ |
RθJC | Thermal Resistance, Junction-to-Case | 1.0 | ℃/W |
RθJA | Ho hanyetsana le Thermal, Junction-to-Ambient | 50 | ℃/W |
Letšoao | Paramethara | Maemo a Teko | Min. | Tlanya. | Max. | Diyuniti |
VDSS | Hlakola Voltage ho Mohloli oa Karohano | VGS=0V, ID=250µA | 120 | -- | -- | V |
IDSS | Hlakola ho Mohloli oa Leakage Current | VDS = 120V, VGS= 0V | -- | -- | 1 | µA |
IGSS(F) | Gate to Source Forward Leakage | VGS =+20V | -- | -- | 100 | nA |
IGSS(R) | Gate to Source Reverse Leakage | VGS =-20V | -- | -- | -100 | nA |
VGS(TH) | Motlakase oa Heke oa Threshold | VDS=VGS, ID = 250µA | 2.5 | 3.0 | 3.5 | V |
RDS(ON)1 | Drin-to-Source On-Resistance | VGS=10V, ID=20A | -- | 6.0 | 6.8 | mΩ |
gFS | Fetela Transconductance | VDS=5V, ID=50A | 130 | -- | S | |
Ciss | Matla a ho Kena | VGS = 0V VDS = 50V f =1.0MHz | -- | 4282 | -- | pF |
Coss | Bokhoni ba tlhahiso | -- | 429 | -- | pF | |
Crss | Reverse Transfer Capacitance | -- | 17 | -- | pF | |
Rg | Khanyetso ea heke | -- | 2.5 | -- | Ω | |
td(ON) | Bulela Nako ea ho lieha | ID =20A VDS = 50V VGS = 10V RG = 5Ω | -- | 20 | -- | ns |
tr | Nako ea Tsoha | -- | 11 | -- | ns | |
td(OFF) | Nako ea ho lieha ho tima | -- | 55 | -- | ns | |
tf | Nako ea hoetla | -- | 28 | -- | ns | |
Qg | Kakaretso ea Tefiso ea Heke | VGS =0 ~ 10V VDS = 50VID =20A | -- | 61.4 | -- | nC |
Qgs | Tefiso ea Mohloli oa Heke | -- | 17.4 | -- | nC | |
Qgd | Tefiso ea Phula ea Heke | -- | 14.1 | -- | nC | |
IS | Diode Forward hona joale | TC =25 °C | -- | -- | 100 | A |
ISM | Diode Pulse ea Hona joale | -- | -- | 320 | A | |
VSD | Diode Forward Voltage | KE=6.0A, VGS=0V | -- | -- | 1.2 | V |
trr | Reverse Recovery nako | IS=20A, VDD=50V dIF/dt=100A/μs | -- | 100 | -- | ns |
Qrr | Reverse Recovery Tefiso | -- | 250 | -- | nC |