WSD75N12GDN56 N-channel 120V 75A DFN5X6-8 WINSOK MOSFET

lihlahisoa

WSD75N12GDN56 N-channel 120V 75A DFN5X6-8 WINSOK MOSFET

tlhaloso e khuts'oane:

Nomoro ea Karolo:WSD75N12GDN56

BVDSS:120V

ID:75A

RDSON:6mΩ

Channel:N-lekanale

Sephutheloana:DFN5X6-8


Lintlha tsa Sehlahisoa

Kopo

Li-tag tsa Sehlahisoa

WINSOK MOSFET kakaretso ea sehlahisoa

Motlakase oa WSD75N12GDN56 MOSFET ke 120V, hona joale ke 75A, khanyetso ke 6mΩ, mocha ke N-channel, 'me sephutheloana ke DFN5X6-8.

WINSOK MOSFET libaka tsa kopo

Thepa ea bongaka ea MOSFET, drones MOSFET, PD phepelo ea matla MOSFET, lisebelisoa tsa motlakase tsa LED MOSFET, lisebelisoa tsa indasteri MOSFET.

Libaka tsa ts'ebeliso ea MOSFETWINSOK MOSFET e lumellana le linomoro tse ling tsa thepa ea mofuta

AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.PANJIT MOSFET PSMQC76N12LS1.

MOSFET parameters

Letšoao

Paramethara

Lintlha

Diyuniti

VDSS

Mokelikeli oa Mohloli oa Mohloli

120

V

VGS

Gate-to-Mohloli Voltage

±20

V

ID

1

Mokelikeli o Tsoelang Pele oa Hona Joale (Tc=25℃)

75

A

ID

1

Mokelikeli o Tsoelang Pele oa Hona Joale (Tc=70℃)

70

A

IDM

Pulsed Drain Current

320

A

IAR

Leqhubu le le leng la sekhahla sa sekhahla sa maqhubu a sekhahla

40

A

EASa

Matla a leqhubu le le leng la pulse avalanche

240

mJ

PD

Pheliso ea Matla

125

W

TJ, Tst

Operating Junction le Storage Temperature Range

- ho tloha ho 55 ho isa ho 150

TL

Boholo ba Mocheso bakeng sa Soldering

260

RθJC

Thermal Resistance, Junction-to-Case

1.0

℃/W

RθJA

Ho hanyetsana le Thermal, Junction-to-Ambient

50

℃/W

 

Letšoao

Paramethara

Maemo a Teko

Min.

Tlanya.

Max.

Diyuniti

VDSS

Hlakola Voltage ho Mohloli oa Karohano VGS=0V, ID=250µA

120

--

--

V

IDSS

Hlakola ho Mohloli oa Leakage Current VDS = 120V, VGS= 0V

--

--

1

µA

IGSS(F)

Gate to Source Forward Leakage VGS =+20V

--

--

100

nA

IGSS(R)

Gate to Source Reverse Leakage VGS =-20V

--

--

-100

nA

VGS(TH)

Motlakase oa Heke oa Threshold VDS=VGS, ID = 250µA

2.5

3.0

3.5

V

RDS(ON)1

Drin-to-Source On-Resistance VGS=10V, ID=20A

--

6.0

6.8

gFS

Fetela Transconductance VDS=5V, ID=50A  

130

--

S

Ciss

Matla a ho Kena VGS = 0V VDS = 50V f =1.0MHz

--

4282

--

pF

Coss

Bokhoni ba tlhahiso

--

429

--

pF

Crss

Reverse Transfer Capacitance

--

17

--

pF

Rg

Khanyetso ea heke

--

2.5

--

Ω

td(ON)

Bulela Nako ea ho lieha

ID =20A VDS = 50V VGS =

10V RG = 5Ω

--

20

--

ns

tr

Nako ea Tsoha

--

11

--

ns

td(OFF)

Nako ea ho lieha ho tima

--

55

--

ns

tf

Nako ea hoetla

--

28

--

ns

Qg

Kakaretso ea Tefiso ea Heke VGS =0 ~ 10V VDS = 50VID =20A

--

61.4

--

nC

Qgs

Tefiso ea Mohloli oa Heke

--

17.4

--

nC

Qgd

Tefiso ea Phula ea Heke

--

14.1

--

nC

IS

Diode Forward hona joale TC =25 °C

--

--

100

A

ISM

Diode Pulse ea Hona joale

--

--

320

A

VSD

Diode Forward Voltage KE=6.0A, VGS=0V

--

--

1.2

V

trr

Reverse Recovery nako IS=20A, VDD=50V dIF/dt=100A/μs

--

100

--

ns

Qrr

Reverse Recovery Tefiso

--

250

--

nC


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