WSD75N12GDN56 N-channel 120V 75A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET kakaretso ea sehlahisoa
Motlakase oa WSD75N12GDN56 MOSFET ke 120V, hona joale ke 75A, khanyetso ke 6mΩ, mocha ke N-channel, 'me sephutheloana ke DFN5X6-8.
WINSOK MOSFET libaka tsa kopo
Thepa ea bongaka MOSFET, drones MOSFET, PD phepelo ea matla MOSFET, LED phepelo ea matla MOSFET, thepa indasteri MOSFET.
Libaka tsa ts'ebeliso ea MOSFETWINSOK MOSFET e lumellana le linomoro tse ling tsa thepa ea mofuta
AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.PANJIT MOSFET PSMQC76N12LS1.
MOSFET parameters
| Letšoao | Paramethara | Lintlha | Diyuniti |
| VDSS | Mokelikeli oa Mohloli oa Mohloli | 120 | V |
| VGS | Gate-to-Mohloli Voltage | ±20 | V |
| ID | 1 Mokelikeli o Tsoelang Pele oa Hona Joale (Tc=25℃) | 75 | A |
| ID | 1 Mokelikeli o Tsoelang Pele oa Hona Joale (Tc=70℃) | 70 | A |
| IDM | Pulsed Drain Current | 320 | A |
| IAR | Leqhubu le le leng la sekhahla sa sekhahla sa maqhubu a sekhahla | 40 | A |
| EASa | Matla a leqhubu le le leng la pulse avalanche | 240 | mJ |
| PD | Ho felloa ke Matla | 125 | W |
| TJ, Tst | Operating Junction le Storage Temperature Range | - ho tloha ho 55 ho isa ho 150 | ℃ |
| TL | Boholo ba Mocheso bakeng sa Soldering | 260 | ℃ |
| RθJC | Thermal Resistance, Junction-to-Case | 1.0 | ℃/W |
| RθJA | Ho hanyetsana le Thermal, Junction-to-Ambient | 50 | ℃/W |
| Letšoao | Paramethara | Maemo a Teko | Min. | Tlanya. | Max. | Diyuniti |
| VDSS | Hlakola Voltage ho Mohloli oa Karohano | VGS=0V, ID=250µA | 120 | -- | -- | V |
| IDSS | Hlakola ho Mohloli oa Leakage Current | VDS = 120V, VGS= 0V | -- | -- | 1 | µA |
| IGSS(F) | Gate to Source Forward Leakage | VGS =+20V | -- | -- | 100 | nA |
| IGSS(R) | Gate to Source Reverse Leakage | VGS =-20V | -- | -- | -100 | nA |
| VGS(TH) | Motlakase oa Heke oa Threshold | VDS=VGS, ID = 250µA | 2.5 | 3.0 | 3.5 | V |
| RDS(ON)1 | Drin-to-Source On-Resistance | VGS=10V, ID=20A | -- | 6.0 | 6.8 | mΩ |
| gFS | Fetela Transconductance | VDS=5V, ID=50A | 130 | -- | S | |
| Ciss | Matla a ho Kena | VGS = 0V VDS = 50V f =1.0MHz | -- | 4282 | -- | pF |
| Coss | Bokhoni ba tlhahiso | -- | 429 | -- | pF | |
| Crss | Reverse Transfer Capacitance | -- | 17 | -- | pF | |
| Rg | Khanyetso ea heke | -- | 2.5 | -- | Ω | |
| td(ON) | Bulela Nako ea ho lieha | ID =20A VDS = 50V VGS = 10V RG = 5Ω | -- | 20 | -- | ns |
| tr | Nako ea Tsoha | -- | 11 | -- | ns | |
| td(OFF) | Nako ea ho lieha ho tima | -- | 55 | -- | ns | |
| tf | Nako ea hoetla | -- | 28 | -- | ns | |
| Qg | Kakaretso ea Tefiso ea Heke | VGS =0 ~ 10V VDS = 50VID =20A | -- | 61.4 | -- | nC |
| Qgs | Tefiso ea Mohloli oa Heke | -- | 17.4 | -- | nC | |
| Qgd | Tefiso ea Phula ea Heke | -- | 14.1 | -- | nC | |
| IS | Diode Forward hona joale | TC =25 °C | -- | -- | 100 | A |
| ISM | Diode Pulse ea Hona joale | -- | -- | 320 | A | |
| VSD | Diode Forward Voltage | KE=6.0A, VGS=0V | -- | -- | 1.2 | V |
| trr | Reverse Recovery nako | IS=20A, VDD=50V dIF/dt=100A/μs | -- | 100 | -- | ns |
| Qrr | Reverse Recovery Tefiso | -- | 250 | -- | nC |
