WSD80100DN56 N-channel 80V 100A DFN5X6-8 WINSOK MOSFET

lihlahisoa

WSD80100DN56 N-channel 80V 100A DFN5X6-8 WINSOK MOSFET

tlhaloso e khuts'oane:

Nomoro ea Karolo:WSD80100DN56

BVDSS:80V

ID:100A

RDSON:6.1mΩ

Channel:N-chalero

Sephutheloana:DFN5X6-8


Lintlha tsa Sehlahisoa

Kopo

Li-tag tsa Sehlahisoa

WINSOK MOSFET kakaretso ea sehlahisoa

Motlakase oa WSD80100DN56 MOSFET ke 80V, hona joale ke 100A, khanyetso ke 6.1mΩ, mocha ke N-channel, 'me sephutheloana ke DFN5X6-8.

WINSOK MOSFET libaka tsa kopo

Drones MOSFET, motors MOSFET, electronics motors electronics MOSFET, lisebelisoa tse kholo tsa MOSFET.

WINSOK MOSFET e lumellana le linomoro tse ling tsa thepa ea brand

AOS MOSFET AON6276,AONS62814T.STMicroelectronics MOSFET STL1N8F7.POTENS Semiconductor MOSFET PDC7966X.

MOSFET parameters

Letšoao

Paramethara

Lintlha

Diyuniti

VDS

Mokelikeli-Mohloli oa Motlakase

80

V

VGS

Gate-Sourka Voltage

±20

V

TJ

Maximum Junction Temperature

150

°C

ID

Storage Mocheso Range

- ho tloha ho 55 ho isa ho 150

°C

ID

Mokelikeli o Tsoelang Pele, VGS=10V,TC=25°C

100

A

Mokelikeli o Tsoelang Pele, VGS=10V,TC=100°C

80

A

IDM

Pulsed Drain Current, TC=25°C

380

A

PD

Phello e Phahameng ea Matla, TC=25°C

200

W

RqJC

Thermal Resistance-Junction to Case

0.8

°C

EAS

Matla a Avalanche, Puse e le 'ngoe,L=0.5mH

800

mJ

 

Letšoao

Paramethara

Maemo

Min.

Tlanya.

Max.

Yuniti

BVDSS

Mokelikeli oa ho Aroha ha Mohloli oa Mokelikeli VGS=0V, keD=250uA

80

---

---

V

BVDSS/△TJ

BVDSSMocheso Coefficient Sheba ho 25, keD=1mA

---

0.043

---

V/

RDS(ON)

Static Drain-Source On-Resistance2 VGS=10V , keD=40A

---

6.1

8.5

mΩ

VGS(th)

Motlakase oa Heke oa Threshold VGS=VDS, keD=250uA

2.0

3.0

4.0

V

VGS(th)

VGS(th)Mocheso Coefficient

---

-6,94

---

mV/

IDSS

Khale-Mohloli Leakage Current VDS=48V , VGS=0V , TJ=25

---

---

2

uA

VDS=48V , VGS=0V , TJ=55

---

---

10

IGSS

Heke-Mohloli Leakage Current VGS=±20V, VDS=0V

---

---

±100

nA

gfs

Fetela Transconductance VDS=5V, keD=20A

80

---

---

S

Qg

Kakaretso ea Tefiso ea Heke (10V) VDS=30V , VGS=10V, keD=30A

---

125

---

nC

Qgs

Tefiso ea Heke-Mohloli

---

24

---

Qgd

Tefiso ea Heke-Drain

---

30

---

Td(ho)

Bulela Nako ea ho lieha VDD=30V , VGS=10V ,

RG=2.5Ω, keD=2A ,RL=15Ω.

---

20

---

ns

Tr

Nako ea Tsoha

---

19

---

Td(e tima)

Nako ea ho lieha ho tima

---

70

---

Tf

Nako ea hoetla

---

30

---

Ciss

Matla a ho Kena VDS=25V , VGS=0V , f=1MHz

---

4900

---

pF

Coss

Bokhoni ba tlhahiso

---

410

---

Crss

Reverse Transfer Capacitance

---

315

---


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