WSD80120DN56 N-channel 85V 120A DFN5X6-8 WINSOK MOSFET

lihlahisoa

WSD80120DN56 N-channel 85V 120A DFN5X6-8 WINSOK MOSFET

tlhaloso e khuts'oane:

Nomoro ea Karolo:WSD80120DN56

BVDSS:85V

ID:120A

RDSON:3.7mΩ

Channel:N-chalero

Sephutheloana:DFN5X6-8


Lintlha tsa Sehlahisoa

Kopo

Li-tag tsa Sehlahisoa

WINSOK MOSFET kakaretso ea sehlahisoa

Motlakase oa WSD80120DN56 MOSFET ke 85V, hona joale ke 120A, khanyetso ke 3.7mΩ, mocha ke N-channel, 'me sephutheloana ke DFN5X6-8.

WINSOK MOSFET libaka tsa kopo

Matla a bongaka a MOSFET, thepa ea ho nka lifoto MOSFET, drones MOSFET, taolo ea indasteri MOSFET, 5G MOSFET, lisebelisoa tsa elektroniki tsa likoloi MOSFET.

WINSOK MOSFET e lumellana le linomoro tse ling tsa thepa ea brand

AOS MOSFET AON6276,AONS62814T.STMicroelectronics MOSFET STL13N8F7,STL135N8F7AG.

MOSFET parameters

Letšoao

Paramethara

Lintlha

Diyuniti

VDS

Mokelikeli-Mohloli oa Motlakase

85

V

VGS

Gate-Sourka Voltage

±25

V

ID@TC=25

Mokelikeli o Tsoelang Pele, VGS@10V

120

A

ID@TC=100

Mokelikeli o Tsoelang Pele, VGS@10V

96

A

IDM

Pulsed Drain Current..TC=25°C

384

A

EAS

Matla a Avalanche, Puse e le 'ngoe,L=0.5mH

320

mJ

IAS

Avalanche ea Hona joale, Molumo o le mong, L=0.5mH

180

A

PD@TC=25

Kakaretso ea Phallo ea Matla

104

W

PD@TC=100

Kakaretso ea Phallo ea Matla

53

W

TSTG

Storage Mocheso Range

-55 ho isa ho 175

TJ

Operating Junction Temperature Range

175

 

Letšoao

Paramethara

Maemo

Min.

Tlanya.

Max.

Yuniti

BVDSS

Mokelikeli oa ho Aroha ha Mohloli oa Mokelikeli VGS=0V, keD=250uA 85

---

---

V

BVDSS/△TJ

BVDSSMocheso Coefficient Sheba ho 25, keD=1mA

---

0.096

---

V/

RDS(ON)

Static Drain-Source On-Resistance VGS=10V,ID=50A

---

3.7

4.8

mΩ

VGS(th)

Motlakase oa Heke oa Threshold VGS=VDS, keD=250uA

2.0

3.0

4.0

V

VGS(th)

VGS(th)Mocheso Coefficient

---

-5.5

---

mV/

IDSS

Khale-Mohloli Leakage Current VDS=85V , VGS=0V , TJ=25

---

---

1

uA

VDS=85V , VGS=0V , TJ=55

---

---

10

IGSS

Heke-Mohloli Leakage Current VGS=±25V, VDS=0V

---

---

±100

nA

Rg

Khanyetso ea Heke VDS=0V , VGS=0V , f=1MHz

---

3.2

---

Ω

Qg

Kakaretso ea Tefiso ea Heke (10V) VDS=50V , VGS=10V, keD=10A

---

54

---

nC

Qgs

Tefiso ea Heke-Mohloli

---

17

---

Qgd

Tefiso ea Heke-Drain

---

11

---

Td(ho)

Bulela Nako ea ho lieha VDD=50V , VGS=10V ,

RG=1Ω,RL=1Ω,IDS=10A.

---

21

---

ns

Tr

Nako ea Tsoha

---

18

---

Td(e tima)

Nako ea ho lieha ho tima

---

36

---

Tf

Nako ea hoetla

---

10

---

Ciss

Matla a ho Kena VDS=40V , VGS=0V , f=1MHz

---

3750

---

pF

Coss

Bokhoni ba tlhahiso

---

395

---

Crss

Reverse Transfer Capacitance

---

180

---


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