WSR200N08 N-channel 80V 200A TO-220-3L WINSOK MOSFET

lihlahisoa

WSR200N08 N-channel 80V 200A TO-220-3L WINSOK MOSFET

tlhaloso e khuts'oane:


  • Nomoro ea Mohlala:WSR200N08
  • BVDSS:80V
  • RDSON:2.9mΩ
  • ID:200A
  • Channel:N-chalero
  • Sephutheloana:HO TSA-220-3L
  • Lehlabula la Sehlahisoa:WSR200N08 MOSFET e khona ho sebetsana le li-volts tse 80 le li-amps tse 200 ka khanyetso ea 2.9 milliohms. Ke sesebelisoa sa N-channel mme se tla ka har'a sephutheloana sa TO-220-3L.
  • Lisebelisoa:Lisakerete tsa elektroniki, li charger tse se nang mohala, li-motor, sistimi ea taolo ea betri, mehloli ea matla e bolokang matla, likoloi tse sa sebetsoang tsa sefofane, lisebelisoa tsa tlhokomelo ea bophelo, lisebelisoa tsa ho tjhaja koloi ea motlakase, lisebelisoa tsa taolo, mechini ea khatiso ea 3D, lisebelisoa tsa elektroniki, lisebelisoa tse nyane tsa lapeng le lisebelisoa tsa elektroniki tsa bareki.
  • Lintlha tsa Sehlahisoa

    Kopo

    Li-tag tsa Sehlahisoa

    Tlhaloso e Akaretsang

    WSR200N08 ke setsi se phahameng ka ho fetisisa sa ts'ebetso ea N-Ch MOSFET e nang le letsoalo le phahameng ka ho fetesisa la lisele, e fanang ka RDSON e ntle haholo le tefiso ea heke bakeng sa lits'ebetso tse ngata tsa synchronous buck converter. WSR200N08 e kopana le tlhoko ea RoHS le Green Product, 100% EAS e netefalitsoeng ka ts'epo e felletseng e lumelletsoeng.

    Likaroloana

    Theknoloji e tsoetseng pele ea high cell density Trench, Super Low Gate Charge, Excellent CdV/dt effect e fokotseha, 100% EAS Guaranteed, Green Device Available.

    Lisebelisoa

    Sesebelisoa sa ho switjha, Power Management bakeng sa Inverter Systems, lisakerete tsa elektroniki, ho tjhaja waelese, li-motors, BMS, lisebelisoa tsa motlakase tsa tšohanyetso, li-drones, bongaka, ho tjhaja koloi, lilaoli, likhatiso tsa 3D, lihlahisoa tsa dijithale, lisebelisoa tse nyane tsa lapeng, lisebelisoa tsa elektroniki tsa bareki, jj.

    nomoro ea thepa e tsamaellanang

    AO AOT480L, ON FDP032N08B,ST STP130N8F7 STP140N8F7, TOSHIBA TK72A08N1 TK72E08N1, joalo-joalo.

    Mekhahlelo ea bohlokoa

    Litšobotsi tsa Motlakase (TJ=25℃, ntle le haeba ho boletsoe ka tsela e 'ngoe)

    Letšoao Paramethara Lintlha Diyuniti
    VDS Mokelikeli-Mohloli oa Motlakase 80 V
    VGS Gate-Mohloli Voltage ±25 V
    ID@TC=25℃ Khala e Tsoelang Pele ea Hona Joale, VGS @ 10V1 200 A
    ID@TC=100℃ Khala e Tsoelang Pele ea Hona Joale, VGS @ 10V1 144 A
    IDM Mokelikeli o Pulsed Current2,TC=25°C 790 A
    EAS Matla a Avalanche, Puse e le 'ngoe,L=0.5mH 1496 mJ
    IAS Avalanche ea Hona joale, Molumo o le mong, L=0.5mH 200 A
    PD@TC=25℃ Kakaretso ea Phallo ea Matla4 345 W
    PD@TC=100℃ Kakaretso ea Phallo ea Matla4 173 W
    TSTG Storage Mocheso Range -55 ho isa ho 175
    TJ Operating Junction Temperature Range 175
    Letšoao Paramethara Maemo Min. Tlanya. Max. Yuniti
    BVDSS Mokelikeli oa ho Aroha ha Mohloli oa Mokelikeli VGS=0V , ID=250uA 80 --- --- V
    △BVDSS/△TJ BVDSS Temperature Coefficient Ho buuoa ka 25℃, ID=1mA --- 0.096 --- V/℃
    RDS(ON) Static Drain-Source On-Resistance2 VGS=10V,ID=100A --- 2.9 3.5
    VGS(th) Motlakase oa Heke oa Threshold VGS=VDS , ID =250uA 2.0 3.0 4.0 V
    △VGS(th) VGS(th) Temperature Coefficient --- -5.5 --- mV/℃
    IDSS Khale-Mohloli Leakage Current VDS=80V , VGS=0V , TJ=25℃ --- --- 1 uA
    VDS=80V , VGS=0V , TJ=55℃ --- --- 10
    IGSS Heke-Mohloli Leakage Current VGS=±25V , VDS=0V --- --- ±100 nA
    Rg Khanyetso ea Heke VDS=0V , VGS=0V , f=1MHz --- 3.2 --- Ω
    Qg Kakaretso ea Tefiso ea Heke (10V) VDS=80V , VGS=10V , ID=30A --- 197 --- nC
    Qgs Tefiso ea Heke-Mohloli --- 31 ---
    Qgd Tefiso ea Heke-Drain --- 75 ---
    Td(ho) Bulela Nako ea ho lieha VDD=50V , VGS=10V ,RG=3Ω, ID=30A --- 28 --- ns
    Tr Nako ea Tsoha --- 18 ---
    Td(e tima) Nako ea ho lieha ho tima --- 42 ---
    Tf Nako ea hoetla --- 54 ---
    Ciss Matla a ho Kena VDS=15V , VGS=0V , f=1MHz --- 8154 --- pF
    Coss Bokhoni ba tlhahiso --- 1029 ---
    Crss Reverse Transfer Capacitance --- 650 ---

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